BUH315D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUH315D®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIG ..
BUH315D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUH315D®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIG ..
BUH50 ,POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
BUH515 ,Silicon NPN Power Transistors TO-3PML packageBUH515®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ FULLY INSULATED P ..
BUH515D ,Silicon NPN Power Transistors TO-3PML packageBUH515D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ H ..
BUH517 ,Silicon NPN Power Transistors TO-3PML packageIr, SGS-'lt1K0MStthl
MHCCEESEDE
[r,ahfh10e(%)
BUH517
CRT HORIZONTAL DEFLECTION
HIGH VO ..
C2012 , Multilayer Ceramic Chip Capacitors General use
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012X5R1A225K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
BUH315D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH315DHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED
FREE WHEELING DIODE.
APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR
TVS
DESCRIPTION The BUH315D is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
July 2002
ABSOLUTE MAXIMUM RATINGS1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
2/7
Derating Curve
Collector Emitter Saturation Voltage
Power Losses at 16 KHz
DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load at 16KHz
(see figure 2)
3/7
Switching Time Resistive Load at 16 KHz
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at 16 KHz scanning frequencies
the optimum negative drive. The test circuit is
illustrated in fig. 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations: L (IC)2 = 1 C (VCEfly)2
ω = 2 πf = 1L C
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION4/7
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit5/7
6/7
