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BUH2M20AP
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
BUH2M20APHIGH VOLTAGE NPN SILICON
POWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODE
OPERATION.
APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMIC
FOCUS IN CTV AND MONITOR.
DESCRIPTION The BUH2M20AP is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
September 1998
ABSOLUTE MAXIMUM RATINGS1/4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area
BUH2M20AP2/4
BUH2M20AP
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
BUH2M20AP4/4
:
www.ic-phoenix.com
.
