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Partno	Mfg	Dc	Qty	Available	Descript
BUH1015		N/a	95	avai	Silicon NPN Power Transistors TO-3PN package

BUH1015 ,Silicon NPN Power Transistors TO-3PN packageABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) 1500 VV Col ..
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BUH1015
Silicon NPN Power Transistors TO-3PN package
BUH1015
BUH1015HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPES HIGH VOLTAGE CAPABILITY VERYHIGH SWITCHING SPEED
APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR AND MONITORS
DESCRIPTION
The BUH1015 and BUH1015HI are manufactured
using Multiepitaxial Mesa technology for
cost-effective high performance and usea Hollow
Emitter structureto enhance switching speeds.
The BUH seriesis designed for usein horizontal
deflection circuitsin televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
December 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage(IE=0) 1500 V
VCEO Collector-Emitter Voltage(IB=0) 700 V
VEBO Emitter-Base Voltage(IC =0) 10 V Collector Current 14 A
ICM Collector Peak Current(tp <5 ms) 18 A Base Current 8 A
IBM Base Peak Current(tp <5 ms) 11 A
Ptot Total DissipationatTc =25oC 160 70 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
TO-218 ISOWATT218
1/8
THERMAL DATA
TO-218 ISOWATT218
Rthj-case Thermal Resistance Junction-case Max 0.78 1.8 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE =1500V
VCE =1500V Tj= 125oC
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V 100 μA
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB =0)= 100 mA 700 V
VEBO Emitter-Base Voltage
(IC =0) =10 mA 10 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =10A IB =2A 1.5 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =10A IB =2A 1.5 V
hFE∗ DC Current Gain IC =10A VCE =5V =10A VCE =5V Tj =100oC 14
RESISTIVE LOAD
Storage Time
Fall Time
VCC =400V IC =10A
IB1 =2A IB2=-6A 1.5
INDUCTIVE LOAD
Storage Time
Fall Time=10A f= 31250 Hz
IB1 =2A IB2 =-6A
Vceflyback= 1200 sin106
INDUCTIVE LOAD
Storage Time
Fall Time =6A f=64 KHz
IB1 =1A
Vbeoff =-2V
Vceflyback= 1100 sin106
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
Safe Operating Area For TO-218 Safe OperatingArea For ISOWATT218
BUH1015/BUH1015HI
2/8
Thermal Impedancefor TO-218
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedancefor ISOWATT218 Current Gain
Base Emitter Saturation Voltage
BUH1015/BUH1015HI
3/8
Power Lossesat64 KHz Switching Time Inductive Loadat 64KHz
(see figure2) orderto saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 hasto be provided for the lowest gain hFEat= 100oC (line scan phase). On the other hand,
negative base current IB2 must be provided the
transistorto turn off (retrace phase). Mostof the
dissipation, especially in the deflection
application, occursat switch-offsoitis essential determine the valueof IB2 which minimizes
power losses, fall timetf and, consequently, Tj.A
new setof curves have been definedto give total
power losses,ts andtfasa functionof IB1at 64
KHz scanning frequencies for choosing the
optimum drive. The test circuitis illustratedin
figure1.
The valuesofL andC are calculated from the
following equations:L (IC)2=1C (VCEfly)22πf= 1LC
Where IC= operating collector current, VCEfly=
flyback voltage,f= frequencyof oscillation during
retrace.
BASE DRIVE INFORMATION
Reverse Biased SOA
BUH1015/BUH1015HI
4/8
Figure1: Inductive Load Switching Test Circuits.
Figure2: Switching Waveformsina DeflectionCircuit
BUH1015/BUH1015HI
5/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.7 4.9 0.185 0.193 1.17 1.37 0.046 0.054 2.5 0.098 0.5 0.78 0.019 0.030 1.1 1.3 0.043 0.051 10.8 11.1 0.425 0.437 14.7 15.2 0.578 0.598 – 16.2 – 0.637 18 0.708 3.95 4.15 0.155 0.163 31 1.220 – 12.2 – 0.480 4 4.1 0.157 0.161
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUH1015/BUH1015HI
6/8

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