BUF420 Fast Delivery |IC PHOENIX CO.,LIMITED

Home › B › B33 > BUF420,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BUF420	ST	N/a	251	avai	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUF420 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified)caseSymbol Parameter Test Conditions ..
BUF420A ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified)caseSymbol Parameter Test Conditions ..
BUF601AU ,HIGH-SPEED BUFFER AMPLIFIER
BUF602ID ,High Speed, Closed Loop Buffer 8-SOIC -45 to 85FEATURES DESCRIPTION2• Wide Bandwidth: 1000MHzThe BUF602 is a closed-loop buffer recommended for• H ..
BUF602IDBVR ,High Speed, Closed Loop Buffer 5-SOT-23 -45 to 85This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
BUF602IDR ,High Speed, Closed Loop Buffer 8-SOIC -45 to 85ELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.At R = 100Ω, unless otherwi ..
C2012 , Multilayer Ceramic Chip Capacitors General use
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012X5R1A225K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD

BUF420
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUF420
BUF420M
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS: SWITCH MODE POWER SUPPLIES MOTOR CONTROL
DESCRIPTION
The BUF420 and BUF420M are manufactured
using High Voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capacity. They usea Cellular Emitter
structure with planar edge terminationto enhance
switching speeds while maintaininga wide
RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE= -1.5V) 850 V
VCEO Collector-Emitter Voltage(IB=0) 450 V
VEBO Emitter-Base Voltage(IC =0) 7 V Collector Current 30 A
ICM Collector Peak Current(tp <5 ms) 60 A Base Current 6 A
IBM Base Peak Current(tp <5 ms) 9 A
TO-218 TO-3
Ptot Total DissipationatTc =25oC 200 200 W
Tstg Storage Temperature -65to 150 oC Max Operation Junction Temperature 150 oC
TO-218 TO-3
(version ”R”)
For TO-3: Tab= Pin2.
1/7
THERMAL DATA
TO-218 TO-3
Rthj-case Thermal Resistance Junction-Case Max 0.63 0.63 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICER Collector Cut-off
Current (RBE =5Ω)
VCE =VCEV
VCE =VCEV Tc =100oC
ICEV Collector Cut-off
Current(IB =0)
VCE =VCEV VBE =-1.5V
VCE =VCEV VBE= -1.5VTc =100oC
IEBO Emitter Cut-off Current
(IC =0)
VBE =5V 1 mA
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage= 200 mA L=25 mH 450 V
VEBO Emitter Base Voltage
(IC =0) =50 mA 7 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =10A IB =1A =10A IB =1A Tc =100oC =20A IB =2A =20A IB =2A Tc =100oC
VBE(sat)∗ Base-Emitter
Saturation Voltage =10A IB =1A =10A IB =1A Tc =100oC =20A IB =2A =20A IB =2A Tc =100oC
dic/dt Rateof rise on-state
Collector Current
VCC =300V RC =0 tp=3μs
IB1 =1.5A Tj =25oC
IB1 =1.5A Tj =100oC
IB1 =6A Tj =100oC
100 A/μs
A/μs
A/μs
VCE(3μs) Collector-Emitter
Dynamic Voltage
VCC =300V RC =60Ω
IB1 =1.5A Tj =25oC
IB1 =1.5A Tj =100oC
VCE(5μs) Collector-Emitter
Dynamic Voltage
VCC =300V RC =60Ω
IB1 =1.5A Tj =25oC
IB1 =1.5A Tj =100oC
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =0.5A= 0.25 mH
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =100oC
VCEW Maximum Collector
Emitter Voltage
without Snubber =10A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =125oC
500 V
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =0 RBB =0.15Ω
Vclamp= 400V IB1 =1A= 0.25 mH
BUF420/ BUF420M
2/7
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =0 RBB =0.15Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =100oC
VCEW Maximum Collector
Emitter Voltage
without Snubber =10A VCC =50V
VBB =0 RBB =0.15Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =125oC
500 V
Storage Time
Fall Time
Cross Over Time =20A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =4A= 0.12 mH
Storage Time
Fall Time
Cross Over Time =20A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =4A= 0.12 mH Tj =125oC
VCEW Maximum Collector
Emitter Voltage
without Snubber
ICWoff =30A VCC =50V
VBB =-5V RBB =0.6Ω= 0.08 mH IB1 =6A =125oC
400 V
Figure1: Turn-on Switching Test Circuit
Figure2: Turn-offSwitching Test Circuit Fast electronic switch 2) Non inductive Resistor 3) Fast recovery rectifier Fast electronic switch 2) Non inductive Resistor
BUF420/ BUF420M
3/7
Turn-off SwitchingTest Waveforms (inductive load). Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area Storage Time Versus Pulse Time.
Turn-on Switching Test Waveforms.
BUF420/ BUF420M
4/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.7 4.9 0.185 0.193 1.17 1.37 0.046 0.054 2.5 0.098 0.5 0.78 0.019 0.030 1.1 1.3 0.043 0.051 10.8 11.1 0.425 0.437 14.7 15.2 0.578 0.598 – 16.2 – 0.637 18 0.708 3.95 4.15 0.155 0.163 31 1.220 – 12.2 – 0.480 4 4.1 0.157 0.161
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUF420/ BUF420M
5/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 11.7 0.460 0.96 1.10 0.037 0.043 1.70 0.066 8.7 0.342 20.0 0.787 10.9 0.429 16.9 0.665 26.2 1.031 3.88 4.09 0.152 0.161 39.50 1.555 30.10 1.185AP
P003N
TO-3 (version R) MECHANICAL DATA
BUF420/ BUF420M
6/7

TEL:86-533-2716050 FAX:86-533-2716790