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BUF12840AIRGER
12 Channel Gamma Buffer with Dual Memory Banks
VSDBKSEL
OUT9
BUF12840OUT1 ¼
OUT10
OUT11
BUF12840
www.ti.com SBOS519A –OCTOBER 2010–REVISED JULY 2011
Programmable Gamma-Voltage Generator
with Integrated Two-Bank Memory and External EEPROM
1FEATURES DESCRIPTIONThe BUF12840 offers 12 programmable gamma
10-BIT RESOLUTION channels with external electrically erasable•
12-CHANNEL P-GAMMA programmable read-only memory (EEPROM) read•
READS FROM EXTERNAL EEPROM capabilities.•
TWO INDEPENDENT PIN-SELECTABLE The BUF12840 has two separate memory banks that
MEMORY BANKS allow simultaneous storageof two different gamma•
RAIL-TO-RAIL OUTPUT: curvesto facilitate switching between gamma curves.–
300mV Min Swing-to-Rail (10mA) All gamma channels offera rail-to-rail output that–
200mV Min Swing-to-Rail (5mA) typically swingsto within 200mVof either supply rail•
LOW SUPPLY CURRENT witha 5mA load.All channels are programmed using•
SUPPLY VOLTAGE: 9Vto 20V a two-wire interface that supports standard operationsto 400kHz and high-speed data transfers upto•
DIGITAL SUPPLY: 2Vto 5.5V3.4MHz.•
TWO-WIRE INTERFACE: Supports 400kHz and
3.4MHz Operation The BUF12840 is manufactured using Texas
Instruments’ proprietary, state-of-the-art, high-voltage
APPLICATIONS CMOS process. This process offers very dense logic
and high supply voltage operationof upto 20V. The•
TFT-LCD REFERENCE DRIVERS BUF12840is offeredina QFN-24 package, andis
