BU406H ,NPN Epitaxial Silicon TransistorBU406/406H/408BU406/406H/408High Voltage Switching Use In Horizontal Deflection Output StageTO-22 ..
BU406TU ,NPN Epitaxial Silicon TransistorBU406/406H/408BU406/406H/408High Voltage Switching Use In Horizontal Deflection Output StageTO-22 ..
BU407 ,NPN POWER TRANSISTORELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎCharacteristic Symbol Min Typ Max Uni ..
BU4070B , High Voltage CMOS Logic ICs
BU4070BF , High Voltage CMOS Logic ICs
BU4070BF , High Voltage CMOS Logic ICs
C1206C222J1GAC , Ceramic Capacitor
C1206C222J1GAC , Ceramic Capacitor
C122B1 ,SILICON CONTROLLED RECTIFIERSMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Repetitive Peak Off-S ..
C122F ,8A silicon controlled rectifier. Vrrom 50V.MOTOROLA SC I0I00ES/0PT01 El DEIEEII;?E'55 DDWIUSEI ll rbdb/dbb MUIUHULA su (DIODES/OPTO) DE 79 DT- ..
C122F ,8A silicon controlled rectifier. Vrrom 50V.MAXIMUM RATINGSRating Symbol Value UnitRepetitive Peak Off-State Voltage, Note 1 VDRM Volts éRepeti ..
C122F1 ,SCRs 8 AMPERES RMS 50 thru 800 VOLTS**SEMICONDUCTOR TECHNICAL DATA ** ** *Reverse Blocking Triode Thyristors . . . designed primarily f ..
BU406H
NPN Epitaxial Silicon Transistor
BU406/406H/408 BU406/406H/408 High Voltage Switching Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 200 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 7 A C I Collector Current (Pulse) 10 A CP I Base Current 4 A B P Collector Dissipation 60 W C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units I Collector Cut-off Current V = 400V, V = 0 5 mA CES CE BE V = 250V, V = 0 100 μA CE BE V = 250V, V = 0 @ T =150°C 1 mA CE BE C I Emitter Cut-off Current V = 6V, I = 0 1 mA EBO BE C V (sat) Collector-Emitter Saturation Voltage CE : BU406 I = 5A, I = 0.5A 1 V C B : BU406H I = 5A, I = 0.8A 1 V C B : BU408 I = 6A, I = 1.2A 1 V C B V (sat) Base-Emitter Saturation Voltage BE : BU406 I = 5A, I = 0.5A 1.2 V C B : BU406H I = 5A, I = 0.5A 1.2 V C B : BU408 I = 6A, I = 1.2A 1.5 V C B f Current Gain Bandwidth Product V = 10V, I = 0.5A 10 MHz T CE C t Turn OFF Time OFF : BU406 I = 5A, I = 0.5A 0.75 μs C B : BU406H I = 5A, I = 0.8A 0.4 μs C B : BU408 I = 6A, I = 1.2A 0.4 μs C B ©2000 Fairchild Semiconductor International Rev. A, February 2000
