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BZX85C9V1 ,SILICON ZENER DIODESAbsolute Maximum RatingsT = 25
BTS774G
High Current-Bridge
SHEMENS
TrilithlCTM BTS 774 G
Overview
Features
q Quad switch driver
q Free configurable as bridge or quad-switch ciiiiiciii'i'iiiia
. Optimized for DC motor management applications
q Ultra low RDS ON @ 25 °C:
High-side switch: typ.165 mQ, P-DSO-28-9
Low-side switch: typ. 45 mn
q Very high peak current capability
q Very low quiescent current
. Space- and thermal optimized power P-DSO-Package
. Full short-circuit-protection
q Operates up to 40 V
. Status flag diagnosis
. Overtemperature shut down with hysteresis
q Short-circuit detection and diagnosis
. Open-Ioad detection and diagnosis
. C-MOS compatible inputs
q Internal clamp diodes
. Isolated sources for external current sensing
. Over- and under-voltage detection with hysteresis
Type Ordering Code Package
BTS 774 G Q67007-A9336 P-DSO-28-9
Description
The BTS 774 G is a TrilithlC contains one double high-side switch and two Iow-side
switches in one P-DSO-28-9 -Package.
"Silicon instead of heatsink"
becomes true
The ultra low Ros ON of this device avoids powerdissipation. It saves costs in mechanical
construction and mounting and increases the efficiency.
The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It
is fully protected and contains the signal conditioning circuitry for diagnosis. (The
comparable standard high-side product is the BTS 611L1.)
Semiconductor Group 1 1999-01-07
SIEMENS BTS 774G
For minimized RDS ON the two Iow-side switches are N channel vertical power FETs in the
SIEMENS SMART SIPMOS® technology. Fully protected by embedded protection
functions. (The comparable standard product is the BSP 78).
Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9
pin configuration). The sources of all four power transistors are connected to separate
So the BTS 774 G can be used in H-Bridge configuration as well as in any other switch
configuration.
Moreover, it is possible to add current sense resistors.
All these features open a broad range of automotive and industrial applications.
Semiconductor Group 2 1999-01-07