BTS771G ,TrilithICapplications• Ultra low R @25
BTS771G
TrilithIC
SHEMENS
TrilithlCTM BTS 771 G
Overview
Features
. Quad switch driver .,i,s.-:rii_i,,,-,ii-ici1s'a'j=iijg
q Free configurable as bridge or quad-switch (t2f'igaisis
. Optimized for DC motor management applications
q Ultra low RDS ON @ 25 °C:
High-side switch: typ. 85 mo, P-DSO-28-9
Low-side switch: typ. 40 mn
q Very high peak current capability
q Very low quiescent current
. Space- and thermal optimized power P-DSO-Package
. Load and GND-short-circuit-protected
q Operates up to 40 V
. Status flag diagnosis
. Overtemperature shut down with hysteresis
q Short-circuit detection and diagnosis
. Open-Ioad detection and diagnosis
. C-MOS compatible inputs
q Internal clamp diodes
. Isolated sources for external current sensing
. Over- and under-voltage detection with hysteresis
Type Ordering Code Package
BTS 771 G Q67007-A9274 P-DSO-28-9
Description
The BTS 771 G is a TrilithlC contains one double high-side switch and two Iow-side
switches in one P-DSO-28-9 -Package.
"Silicon instead of heatsink"
becomes true
The ultra low Ros ON of this device avoids powerdissipation. It saves costs in mechanical
construction and mounting and increases the efficiency.
The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It
is fully protected and contains the signal conditioning circuitry for diagnosis. (The
comparable standard high-side product is the BTS 621 L1 .)
Semiconductor Group 1 1999-01-07
SIEMENS BTS 771 G
For minimized Ros ON the two low-side switches are produced in the SIEMENS Millifet
logic level technology (The comparable standard product is the BUZ 103AL).
Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9
pin configuration). The sources of all four power transistors are connected to separate
So the BTS 771 G can be used in H-Bridge configuration as well as in any other switch
configuration.
Moreover, it is possible to add current sense resistors.
All these features open a broad range of automotive and industrial applications.
Semiconductor Group 2 1999-01-07
