BTS740S2 ,High Side SwitchesGeneral Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS comp ..
BTS7700G ,Smart Motorbridges + Driver ICsTrilithIC BTS 7700 GData Sheet1Overview1.1
BTS7700G . ,Smart Motorbridges + Driver ICsFeatures Quad D-MOS switch driver Free configurable as bridge or quad-switch Optimized for DC mo ..
BTS770G ,TrilithICapplications• Ultra low R @25
BTS740S2
High Side Switches
Smart High-Side Power Switch
Two Channels: 2 x 30mΩ
Current Sense
Product Summary Package
General Description N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input,
diagnostic feedback and proportional load current sense monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions
Applications µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Functions CMOS compatible input Undervoltage and overvoltage shutdown with auto-restart and hysteresis Fast demagnetization of inductive loads Logic ground independent from load ground
Protection Functions Short circuit protection Overload protection
• Current limitation
• Thermal shutdown Overvoltage protection (including load dump) with external
resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
Diagnostic Functions Proportinal load current sense Diagnostic feedback with open drain output Open load detection in OFF-state with external resistor Feedback of thermal shutdown in ON-state
Functional diagram
Pin Definitions and Functions
Pin configuration Maximum Ratings at Tj = 25°C unless otherwise specified
Thermal Characteristics Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15 not subject to production test, specified by design
Protection Functions13) 10) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram page 9.
11) Measured with load; for the whole device; all channels off
12) Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
14) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest ON(CL)
Reverse Battery
Diagnostic Characteristics 15) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 9).
16) This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by
a factor of two by matching the value of kILIS for every single device.
In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is
High. See figure 2c, page 12.
17) Valid if Vbb(u rst) was exceeded before.
Input and Status Feedback20) 20) If ground resistors RGND are used, add the voltage drop across these resistors.
Truth Table L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 13)
Parallel switching of channel 1 and 2 is possible by connecting the inputs and outputs in parallel. The status
outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor. The current
sense outputs IS1 and IS2 have to be connected with a single pull-down resistor.
Terms
PROFETIS1
ST1
GND1ST1VIN1
IST1IN1bb
IbbGND1
17,18
Leadframe
IN1IS1IS1OUT1ON1L1OUT1GND1
Chip 1
PROFETIS2
ST2
GND2ST2VIN2
IST2IN2GND2
13,14
Leadframe
IN2IS2IS2
VOUT2
VON2
OUT2L2GND2
Chip 2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
21) The voltage drop over the power transistor is Vbb-VOUT > 3V typ. Under this condition the sense current IIS is
zero
22) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
23) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
