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BTS736L2
Smart High-Side Power Switch Two Channels: 2 x 40m Status Feedback
Smart High-Side Power Switch
Two Channels: 2 x 40mΩ
Status Feedback
Product Summary Package
General Description N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions
Applications µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Functions Very low standby current CMOS compatible input Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground
Protection Functions Short circuit protection Overload protection
• Current limitation
• Thermal shutdown Overvoltage protection (including load dump) with external
resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
Diagnostic Function Diagnostic feedback with open drain output Open load detection in ON-state Feedback of thermal shutdown in ON-state
Block Diagram
Functional diagram
Pin Definitions and Functions
Pin configuration Maximum Ratings at Tj = 25°C unless otherwise specified
Thermal Characteristics Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14 not subject to production test, specified by design See timing diagram on page 11.
9) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 8.
Protection Functions12)
Reverse Battery 12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
13) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest ON(CL)
14) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
Diagnostic Characteristics
Input and Status Feedback15) 15) If ground resistors RGND are used, add the voltage drop across these resistors.
Truth Table L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The
status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
PROFETIN1
ST1
OUT1
GND1bb
VST1VIN1IN1bbL1
VOUT1IGND1
VON1
Leadframe
17,18
IbbST1GND1
Chip 1
PROFETIN2
ST2
OUT2
GND2bb
VST2VIN2IN2L2
VOUT2IGND2
VON2
Leadframe
13,14IST2GND2
Chip 2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
