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BTS734L1
Ordering Code: Q67060-S7009
PROFET® BTS 734 L1
Smart Two Channel Highside Power Switch
Features• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application• μC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
Pin Definitions and FunctionsN.C.
Product SummaryVbb(AZ)43Vbb(on)5.0 ... 34
Pin configuration (top view)bbVbb
GND1Vbb
IN1OUT1
ST1OUT1
N.C.Vbb
GND2Vbb
IN2OUT2
ST2OUT2
N.C.VbbbbVbb
BTS 734 L1
Block diagramTwo Channels; Open Load detection in on state;
Signal GND
Chip 1
PROFETLeadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Signal GND
Chip 2
Chip 2
Load GND
Maximum Ratings at Tj = 25°C unless otherwise specified
BTS 734 L1
Maximum Ratings at Tj = 25°C unless otherwise specified
Thermal Characteristics Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.RI = internal resistance of the load dump test pulse generatorVLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for Vbb
BTS 734 L1
Electrical Characteristics
Load Switching Capabilities and CharacteristicsRON
Operating Parameters See timing diagram on page 12.
BTS 734 L1
Protection FunctionsIL(SCp)47twice the current of one channel
Reverse Battery 10)Add IST, if IST > 0
11)If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowestON(CL)12)Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
BTS 734 L1
Diagnostic Characteristics20
Input and Status Feedback14)
13)External pull up resistor required for open load detection in off state.
14)If ground resistors RGND are used, add the voltage drop across these resistors.
BTS 734 L1
Truth TableL = "Low" LevelX = don't careZ = high impedance, potential depends on external circuit
H = "High" LevelStatus signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The
status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.
TermsST1VIN1OUT1ST1
VST2VIN2OUT2IST2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
15)With external resistor between output and Vbb
16)An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
BTS 734 L1
Input circuit (ESD protection), IN1 or IN2ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
Status output, ST1 or ST2GND
RST(ON)
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Inductive and overvoltage output clamp,OUT1 or OUT2
OUT
PROFET
Power GND
VON clamped to VON(CL) = 47 V typ.
Overvoltage protection of logic part GND1 or GND2
GND
Signal GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω, RST = 15 kΩ nominal.
Reverse battery protection ± 5V
OUTR
RGND = 150 Ω, RI = 3.5 kΩ typ,
Temperature protection is not active during inverse current
operation.
