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BTS711L1
Smart Four Channel Highside Power Switch
Smart Four Channel Highside Power Switch
Features • Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection
Application • µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Pin Definitions and Functions
Product Summary Pin configuration (top view) bb Vbb
GND1/2 Vbb
IN1 OUT1
ST1/2 OUT2
IN2 Vbb
GND3/4 Vbb
IN3 OUT3
ST3/4 OUT4
IN4 Vbb bb Vbb
Block diagram Four Channels; Open Load detection in on state;
+ Vbb
IN1
ST1/2ESD
OUT1
Logic
Voltage
sensor
Voltagesource
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit forunclamped
ind. loads 1
Gate 1protection
Current
limit 1Logic
Overvoltageprotection
OUT2
Open load
detection 2
Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit for
unclamped
ind. loads 2
Gate 2
protectionCurrent
limit 2
IN25
GND1/2O1O2
Charge
pump 1
Charge
pump 2Channel 2
Channel 1
Signal GND
GND1/22
Chip 1Chip 1
+ Vbb
IN3
ST3/4
PROFET
OUT3
OUT4
IN49
GND3/4O3O4
Channel 4
Channel 3
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Leadframe
Load GND
LoadLeadframe
Load GND
LoadSignal GND
GND3/46
Chip 2Chip 2
Logic and protection circuit of chip 2
(equivalent to chip 1)
Maximum Ratings at Tj = 25°C unless otherwise specified
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters
Protection Functions10)
Reverse Battery
Add IST, if IST > 0
10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest ON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
Diagnostic Characteristics
Open load detection current, (on-condition) each channel, Tj = -40°C: Tj = 25°C: Tj = 150°C:
I L (OL)1
Input and Status Feedback14)
Truth Table
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
PROFETIN2
ST1/2
OUT2
GND1/2bbOUT2IGND1/2ON2
Leadframe
IN1OUT1ON1L1OUT1IN1VIN2VST1/2
IbbIN1IN2
IST1/2IL2GND1/2bb
Chip 1
PROFETIN4
ST3/4
OUT4
GND3/4bbOUT4IGND3/4ON4
Leadframe
IN3OUT3ON3L3OUT3IN3VIN4VST3/4IN3IN4
IST3/4IL4GND3/4
Chip 2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for
reverse battery protection up to the max. operating voltage.
15) With additional external pull up resistor
16) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
Input circuit (ESD protection), IN1...4
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a
drift of the zener voltage (increase of up to 1 V).
Status output, ST1/2 or ST3/4
GNDST(ON)
ESD-Zener diode: 6.1 V typ., max 5.0 mA;
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to
be used as voltage clamp at DC conditions. Operation in
this mode may result in a drift of the zener voltage
(increase of up to 1 V).
Inductive and overvoltage output
clamp, OUT1...4
OUT
PROFET
Power GND
VON clamped to VON(CL) = 47 V typ.
Overvoltage protection of logic part
GND1/2 or GND3/4
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω
Reverse battery protection
GND
LogicSTR
± 5V
OUTR
Power GND
GNDR
Signal GND
Power
InverseR
Vbb-
Diode
RGND = 150 Ω, RI = 3.5 kΩ typ,
Temperature protection is not active during inverse
current operation.
