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BTS710L1
Ordering Code: Q67060-S7004-A002
PROFET® BTS 710 L1
Smart Four Channel Highside Power Switch
Features• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application• μC compatible power switch with diagnostic feedback
for 12 V DC grounded loads
• Most suitable for resistive and lamp loads
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Product Summary435.0 ... 24
Pin configuration (top view)bbVbb
GND1/2Vbb
IN1OUT1
ST1/2OUT2
IN2Vbb
GND3/4Vbb
IN3OUT3
ST3/4OUT4
IN4VbbbbVbb
BTS 710 L1
Block diagramFour Channels; Open Load detection in on state;Logic
Signal GND
Chip 1Chip 1
PROFET
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Load GND
Signal GND
Chip 2Chip 2
Maximum Ratings at Tj = 25°C unless otherwise specifiedUnit
BTS 710 L1
Maximum Ratings at Tj = 25°C unless otherwise specifiedUnit Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.RI = internal resistance of the load dump test pulse generatorVLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for Vbb
Electrical Characteristics
Load Switching Capabilities and Characteristics
BTS 710 L1A
Operating ParametersVbb(on)
At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
BTS 710 L1
Protection FunctionsIL(SCp)8
11.5twice the current of one channelfour times the current of one channel
Reverse Battery
Diagnostic CharacteristicsI L (OL)410
150twice the current of one channelfour times the current of one channel
10)Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
BTS 710 L1
Input and Status Feedback12) 12)If ground resistors RGND are used, add the voltage drop across these resistors.
BTS 710 L1
Truth TableIN1IN2ST3/4
L = "Low" LevelX = don't careZ = high impedance, potential depends on external circuit
H = "High" LevelStatus signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
TermsOUT2OUT1IN1VIN2VST1/2
IbbIN1IN2ST1/2bbOUT4OUT3IN3VIN4VST3/4IN3IN4ST3/4L4
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for
reverse battery protection up to the max. operating voltage.
13)With additional external pull up resistor
14)An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
