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BTS660P
Smart Highside High Current Power Switch
PROFET® Data Sheet BTS660P Smart Highside High Current Power Switch
Reversave • Reverse battery protection by self turn on of
power MOSFET
Features • Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Application • Power switch with current sense diagnostic
feedback for up to 48 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
PROFET
1,2,6,7
Load GND
VIS
IIN
Logic GNDIN
Product Summary TO 220-7SMD
Standard
SMD
Data Sheet BTS660P Maximum Ratings at Tj = 25 °C unless otherwise specified 3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current
capability and decrease the current sense accuracy
4) Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of
the tab.
Data Sheet BTS660P Thermal Characteristics
Electrical Characteristics
Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7) IL = 20 A, Tj = 25 °C: VIN = 0, IL = 20 A, Tj = 150 °C:
RON
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) not subject to production test, specified by design
10) TJ is about 105°C under these conditions.
11) See timing diagram on page 14.
Data Sheet BTS660P Inverse Load Current Operation
Operating Parameters 12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit.
13) not subject to production test, specified by design
14) VbIN = Vbb - VIN see diagram on page 15. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
Data Sheet BTS660P Protection Functions16)Short circuit current limit (Tab to pins 1,2,6,7)
Reverse Battery ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions
are not designed for continuous repetitive operation.
17) not subject to production test, specified by design
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To
Data Sheet BTS660P Diagnostic Characteristics Current sense ratio, IL = 80 A,Tj =-40°C:
static on-condition, Tj =25°C:
kILIS = IL : IIS, Tj =150°C:
VON < 1.5 V ), IL = 20 A,Tj =-40°C:
VIS
VbIN > 4.0 V Tj =150°C:
see diagram on page 12 IL = 10 A,Tj =-40°C:Tj =25°C:Tj =150°C:IL = 4 A,Tj =-40°C:Tj =25°C:Tj =150°C:
kILIS
Input mA
19) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20) not subject to production test, specified by design
21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Data Sheet BTS660P Truth Table
L = "Low" Level
H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
22) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
23) Power Transistor "OFF", potential defined by external impedance.
Terms bbbIN
Two or more devices can easily be connected in
parallel to increase load current capability.
RON measurement layout
(both out
pins parallel)
l ≤
Typical RON for SMD version is about 0.2 mΩ less
than straight leads due to l ≈ 2 mm
Data Sheet BTS660P Input circuit (ESD protection)
Vbb
VbIN
VIN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
bipolar or MOS transistor with appropriate breakdown
voltage as driver.
VZ,IN = 74 V (typ).
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...300 µs). Logic
unit
Current sense status output RIVV
VZ,IS = 74 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
driven only by the internal circuit as long as Vout - VIS >
5 V. If you want measure load currents up to IL(M), RIS
should be less than Vbb - 5 V
IL(M) / Kilis.
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also over voltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and over voltage output clamp
PROFETOUT
VON is clamped to VON(Cl) = 62 V typ
