BTS621L1 ,Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)General Description N channel vertical power FET with charge pump, ground referenced CMOS compatibl ..
BTS621L1. ,Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)Features Product Summary • Overload protection Overvoltage protection V 43 V• bb(AZ) Current limita ..
BTS640S2 ,Smart Sense High-Side Power SwitchFeatures On-state resistance R 30mΩON• Short circuit protection Load current (ISO) I 12.6A• L(ISO) ..
BTS640S2 G ,High Side SwitchesBlock Diagram 4+ VbbVoltageOvervoltage Current Gatesourceprotection limitprotectionVLogic6, 7OUTCh ..
BTS640S2G ,Smart Sense High-Side Power SwitchGeneral Description N channel vertical power FET with charge pump, ground referenced CMOS compatibl ..
BTS660P ,Smart Highside High Current Power SwitchFeatures V 5.0 ... 58 VOperating voltage bb(on)• Overload protection On-state resistance R 9ON mΩ• ..
BZX84C7V5W-7-F , 200mW SURFACE MOUNT ZENER DIODE
BZX84C8V2 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEElectrical CharacteristicsT = 25
BTS621L1-BTS621L1.
Smart Two Channel Highside Power Switch
Smart Two Channel Highside Power Switch
Features • Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application • µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ Vbb
IN1
Signal GND
ESD
PROFET
OUT1
GND
Logic
Voltage
sensor
Voltagesource
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit for
unclamped
ind. loads 1
Gate 1protection
Current
limit 1
Load GND
LoadLogic
Overvoltageprotection
OUT2
Open load
detection 2Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit forunclamped
ind. loads 2
Gate 2
protectionCurrent
limit 2
IN26
GNDO1O2
Charge
pump 1
Charge
pump 2
Product Summary Maximum Ratings at Tj = 25 °C unless otherwise specified Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
Thermal Characteristics Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Load Switching Capabilities and Characteristics Operating Parameters At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
7) See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Protection Functions9)
Diagnostic Characteristics Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.
10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
Input and Status Feedback12) 12) If a ground resistor RGND is used, add the voltage drop across this resistor.
Truth Table L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
13) With additional external pull up resistor
14) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
15) Low resistance to Vbb may be detected in the ON-state by the no-load-detection
Terms STIN1
ISTIN1
VOUT2IN2IN2OUT1
Input circuit (ESD protection) IESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
Status output GNDST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
Inductive and overvoltage output clamp GNDPROFET
VON clamped to 47 V typ.
Overvolt. and reverse batt. protection GNDR
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 kΩ typ,
RGND= 150 Ω
Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high Logic
unit
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Logic
unit
Signal GND
OFF
GND disconnect
PROFETIN2
OUT2
GNDbb
Ibb
IN1OUT1IN1VIN2VSTVGND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
