BTS4880R ,Smart Power High-Side-Switch Eight Channels: 8 x 200 mGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS or V /2 bb ..
BTS4880R . ,Smart Power High-Side-Switch Eight Channels: 8 x 200 mFeatures Product Summary• Output current 0,625 A per channel Overvoltage protection V 47 Vbb(AZ)• S ..
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BTS4880R-BTS4880R .
Smart Power High-Side-Switch Eight Channels: 8 x 200 m
BTS 4880 R
Smart Power High-Side-Switch
Eight Channels: 8 x 200 mΩ
Features• Output current 0,625 A per channel
• Short circuit protection
• Maximum current internally limited
• Overload protection
• Input protection
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Thermal shutdown with restart
• Thermal independence of separate channels
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection
• Programmable input for CMOS or Vbb/2
• Common diagnostic output ( current output )
for overtemperature
Product Summary
Application• Output driver for industrial applications ( PLC )
• All types of resistive, inductive and capacitive loads
• µC or optocoupler compatible power switch for 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS or Vbb/2
compatible input and common diagnostic feedback, monolithically integrated in
Smart SIPMOS technology. Providing embedded protective functions.
BTS 4880 R
Block Diagram
BTS 4880 R
BTS 4880 R
Maximum Ratingsdefined by PtotAt VIN > Vbb, the input current is not allowed to exceed ±5 mA. Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.not subject to production test, specified by designVLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
BTS 4880 R
Electrical Characteristics
Thermal Characteristics
Load Switching Capabilities and Characteristics Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
BTS 4880 R
Electrical Characteristics
Operating Parameters
Protection Functions2)contains all input currentsIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation
. see also VON(CL) in circuit diagram on page 10 higher operating temperature at normal function for each channel available
BTS 4880 R
Electrical Characteristics
Input
Diagnostic CharacteristicsAt VIN > Vbb, the input current is not allowed to exceed ±5 mA.see page 9LS-pin is connected to Vbbsee page 10
BTS 4880 R
Electrical Characteristics
Reverse Batterydefined by Ptot
BTS 4880 R
Truth table for common diagnostic pin ( LED-driver ):L = no diagnostic output current
H = diagnostic output current typ. 2 mA (see page 7)
Programmable input:Vbb
LogicInput
Level Shifter
GNDtyp . 800 kΩ
Functional description LS-Pin:With using the LS-pin it is possible to change the input turn-on and -off threshold voltage
between CMOS and half supply voltage level.
Therefore you have either to connect the LS-pin to GND ( state 1 ) or to supply voltage ( state 2 ).
If the LS-pin is not connected the input threshold voltages are automatically at CMOS level,
caused by an internal pull down to GND with typ. 800kΩ ( see circuit ).
State 1: LS-Pin to GND CMOS - Input level
State 2: LS-Pin to supply voltage Vbb/2 - Input level
BTS 4880 R
Termseach channel
Inductive and overvoltage output clampeach channel
PROFETIN1...8OUT1...8
GNDLSININbbbbLOUTIGNDONDIAGDIAG
+ Vbb
OUT
GNDZON
VON clamped to 47 V min.
Overvoltage protection of logic partInput circuit (ESD protection)each channel
+ Vbb
GNDDR
Signal GND
LogicZ2
optionalDRI
Vbb
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommendedVZ2=Vbb(AZ)=47 V min.,
RI=3 kΩ typ., RGND=150Ω
Reverse battery protectioneach channel
Common diagnostic outputD
gicPower G
GNDRignal GND
Pow
InverseR
Dioptional
DIAG
Vbb
Logic
ESDGND=150Ω, RI=3kΩ typ.,
