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BTS452T-BTS452T .
Smart Power High-Side-Switch
BTS 452 T
Smart Power High-Side-Switch
Features• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection
with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current
Product SummaryP-TO252-5-11
Application• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC applications
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
BTS 452 T
Block DiagramSignal GND
miniPROFET
Load GND
VLogic
Pin configuration
BTS 452 T
Maximum Ratings at Tj = 25°C, unless otherwise specified
Thermal Characteristics1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
BTS 452 T
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters
BTS 452 T
Electrical Characteristics
Protection Functions1)
Reverse Battery1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 7
4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
BTS 452 T
Input
BTS 452 T
TermsInductive and overvoltage output clampGND
PROFETOUT
GNDININbbbbLOUTIGNDONGND
VON clamped to 59V min.
Overvoltage protection of logic partInput circuit (ESD protection)bb
GND
GNDR
Signal GND
LogicZ2RZ1
GNDRIIIESD-
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommendedZ1=6.1V typ., VZ2=Vbb(AZ)=62V min.,I=3.5 kΩ typ., RGND=150Ω
Reverse battery protection
Internal output pull downGND
LogicR
Power GND
GNDR
Signal GND
Power
InverseR
DiodeOUT
Signal GNDObbGND=150Ω, RI=3.5kΩ typ.,
Temperature protection is not active during
inverse current
BTS 452 Tbb disconnect with charged inductive
load
PROFETOUT
GNDbb
high
GND disconnect
PROFETOUT
GNDbbVINVGND
Inductive Load switch-off energy
dissipation
GND disconnect with GND pull up
PROFETOUT
GND
Energy stored in load inductance: EL = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET isAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:ILVVIROUTCL
OUTCL=++**(|)*ln(*)()|21
