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BTS443P
Smart Highside Power Switch
PROFET® Data Sheet BTS 443 P
Smart Highside Power Switch
Reversave • Reverse battery protection by self turn on of
power MOSFET
Features • Short circuit protection
• Current limitation
• Overload protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for
charged inductive loads)
• Very low standby current
• Fast demagnetisation of inductive loads
• Electrostatic discharge (ESD) protection
• Optimized static electromagnetic compatibility (EMC)
Diagnostic Function • Proportional load current sense (with defined fault signal during thermal shutdown)
Application • Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
• All types of resistive, capacitive and inductive loads (no PWM with inductive loads)
• Replaces electromechanical relays, fuses and discrete circuits
General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
PROFET
Load GNDL
VIS
IIN
Logic GNDIN
Package
Data Sheet BTS 443 P *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings at Tj = 25 °C unless otherwise specified ) Short circuit is tested with 100mΩ and 20µH
2) VLoad dump is set-up without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Data Sheet BTS 443 P
Thermal Characteristics 3) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Load Switching Capabilities and Characteristics
Data Sheet BTS 443 P
Operating Parameters
Protection Functions 7)
Reverse Battery
5) VbIN=Vbb-VIN see diagram on page 11.
6) see also VON(CL) in circuit diagram on page 7.
7) Integrated protection functions are designed to prevent IC destruction under fault condition described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
Data Sheet BTS 443 P
Diagnostic Characteristics
If VON is higher, the sense current is no longer proportional to the load current due to sense current
Input
Data Sheet BTS 443 P
Truth Table
L = "Low" Level Z = high impedance, potential depends on external circuit
H = "High" Level
11) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
Terms ININbbOUTbIN
Two or more devices can easily be connected in
parallel to increase load current capability.
Data Sheet BTS 443 P
Input circuit (ESD protection)
Vbb
VbIN
VIN
ESD-Zener diode: 68 V typ., max 15 mA;
Current sense output
Normal operation V
VZ,IS = 68 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as
Vout - VIS > 5V. If you want to measure load currents
up to IL(M), RIS should be less than
ilisMLIV(.
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and overvoltage output clamp
PROFET
VON is clamped to VON(Cl) = 42 V typ.
Overvoltage protection of logic part
Signal GND
Rbb = 200 Ω typ., VZ,IN = VZ,IS = 68 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 73 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
