BTS442E2 E3062A ,Smart Highside Power SwitchGeneral Description N channel vertical power FET with charge pump, ground referenced CMOS compatibl ..
BTS443P ,Smart Highside Power Switchapplications!*) *) Not shorting all outputs will considerably increase the on-state resistance, re ..
BTS452R ,Smart Power High-Side-SwitchFeatures Product Summary• Overload protection Overvoltage protection V 62 Vbb(AZ)• Current limitati ..
BTS452R ,Smart Power High-Side-SwitchBlock Diagram+ VbbVoltageGateOvervoltage Currentsource protection limitprotectionVLogicOUTLimit for ..
BTS452T ,Smart Power High-Side-SwitchBlock Diagram+ VbbVoltageOvervoltage Current Gatesourceprotection limit protectionVLogicOUTLimit fo ..
BTS452T . ,Smart Power High-Side-SwitchFeatures Product Summary• Overload protection Overvoltage protection V 62 Vbb(AZ)• Current limitati ..
BZX84-C5V1 ,Voltage regulator diodesGeneral descriptionLow-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted D ..
BZX84C-5V1 ,Voltage regulator diodesGeneral descriptionLow-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted D ..
BZX84C5V1LT1 ,SEMICONDUCTOR(TECHNICAL DATA)ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, ..
BZX84C5V1LT1G , Zener Voltage Regulators
BZX84C5V1T-7-F , 150mW SURFACE MOUNT ZENER DIODE
BZX84C5V1TS-7-F , TRIPLE SURFACE MOUNT ZENER DIODE ARRAY
BTS442E2-BTS442E2 E3062A
Smart Highside Power Switch
Smart Highside Power Switch
Features • Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Signal GND
PROFET
Load GNDLogicbb
Product Summary
Maximum Ratings at Tj = 25 °C unless otherwise specified
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters
5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
BTS 442 E2 Protection Functions8)
Diagnostic Characteristics
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation. Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown
10) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2 * (VON(CL)
VON(CL) - Vbb ), see diagram page 8
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
BTS 442 E2 Input and Status Feedback12)
12) If a ground resistor RGND is used, add the voltage drop across this resistor.
Truth Table
L = "Low" Level
H = "High" Level
13) Power Transistor off, high impedance
14) Low resistance short Vbb to output may be detected by no-load-detection
15) No current sink capability during undervoltage shutdown
Terms
PROFETIN
OUT
GNDSTVIN
ISTINbb
IbbL
VOUTIGNDONGND
Input circuit (ESD protection) I
ZDI1 6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).
BTS 442 E2
