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BTS441T
Smart Highside Power Switch One Channel: 20m
BTS 441 T Smart Highside Power Switch
One Channel: 20mΩ
Product Summary Package
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS® technology. Providing embedded protective functions.
Application µC compatible power switch for 5V, 12 V and 24 V DC applications All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Funktions Very low standby current Optimized static electromagnetic compatibility (EMC) µC and CMOS compatible Fast demagnetization of inductive loads Stable behaviour at undervoltage
Protection Functions Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection (including load dump) with external
GND-resistor Reverse battery protection with external GND-resistor Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection BTS 441 T Functional diagram
Pin Definitions and Functions
Pin configuration
BTS 441 T Maximum Ratings at Tj = 25 °C unless otherwise specified Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) EAS is the maximum inductive switch off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 441 T Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters not subject to production test, specified by design
7) see also VON(CL) in table of protection functions and circuit diagram page 7
BTS 441 T Protection Functions10) 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) not subject to production test, specified by design
12) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
13) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 1 and circuit page 7).
BTS 441 T Input14) 14) If a ground resistor RGND is used, add the voltage drop across this resistor.
