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BTS436L2 S
Smart High Side Switches
Smart High-Side Power Switch
One Channel: 38mΩ
Status Feedback
Product Summary Package
General Description N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions
Applications µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Functions Very low standby current CMOS compatible input Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground
Protection Functions Short circuit protection Overload protection
• Current limitation
• Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
Diagnostic Function Diagnostic feedback with open drain output Open load detection in ON-state Feedback of thermal shutdown in ON-state
TO 220-5-11 TO-263-5-2 TO-220-5-12 Standard SMD Straight
Block Diagram
Functional diagram
Pin Definitions and Functions
Pin configuration
Maximum Ratings at Tj = 25 °C unless otherwise specified
Thermal Characteristics 1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). 2) RI = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) EAS is the maximum inductive switch-off energy
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters 6) not subject to production test, specified by design 7) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and
circuit diagram page 7.
Protection Functions10)
Diagnostic Characteristics
Input and Status Feedback14) 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
12) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7).
Truth Table L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11)
