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BTS432I2
Smart Highside Power Switch
PROFET® BTS 432 I2
Smart Highside Power Switch
Features· Load dump and reverse battery protection1) Clamp of negative voltage at output· Short-circuit protection· Current limitation· Thermal shutdown· Diagnostic feedback· Open load detection in OFF-state· CMOS compatible input· Electrostatic discharge (ESD) protection· Loss of ground and loss of Vbb protection2)
· Overvoltage protection
· Undervoltage and overvoltage shutdown with auto-restart and
hysteresis
Application· mC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads· All types of resistive, inductive and capacitve loads
· Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protectionfunctions.
PROFET
Load GND
Product Summary8058-3238423311
BTS 432 I2
Maximum Ratings at Tj = 25 °C unless otherwise specifiedUnitAW
K/W
3)VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 432 I2
Electrical CharacteristicsUnit
Load Switching Capabilities and CharacteristicsAmA
Operating ParametersVVVVV
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT »Vbb - 2 V
BTS 432 I2
Protection Functions
Diagnostic CharacteristicsmA
)Short circuit current limit for max. duration of 400 ms, prior to shutdown (see td(SC) page 4)While demagnetizing load inductance, dissipated energy in PROFET is EAS=
ò VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2L * (VON(CL)
VON(CL) - Vbb ), see diagram page 8
10)Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current IGND of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under thesecondition is dependent on the size of the heatsink. Reverse I can be reduced by an additional external
BTS 432 I2
Input and Status Feedback11)VVVmsms
11)If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS 432 I2
Truth Table
Input-OutputLLL = "Low" LevelH = "High" Level
14)Power Transistor off, high impedance
Terms
Input circuit (ESD protection)ZDI1 6.1 V typ., ESD zener diodes are not designed forcontinuous current
Status outputZener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ,ESD zener diodes are not designed for continuouscurrent
Short Circuit detectionFault Condition: VON > 8.3 V typ.; IN high
BTS 432 I2
Inductive and overvoltage output clampVON clamped to 58 V typ.
Overvolt. and reverse batt. protectionRbb = 120 W typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
Open-load detectionOFF-state diagnostic condition: VOUT > 3 V typ.; IN low
GND disconnectAny kind of load. In case of Input=high is VOUT » VIN - VIN(T+) .Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull upAny kind of load. If VGND > VIN - VIN(T+) device stays offDue to VGND >0, no VST = low signal available.
Vbb disconnect with charged inductiveload
BTS 432 I2
Inductive Load switch-off energy
dissipationEnergy dissipated in PROFET EAS = Ebb + EL - ER.
ELoad < EL, EL = 1/2 * L * I2L
