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BTS432E2-BTS432E2 E3062A-BTS432E2.
Smart Highside Power Switch
Smart Highside Power Switch
Features • Load dump and reverse battery protection1)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in ON-state
• CMOS compatible input
• Electrostatic discharge (ESD) protection
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with auto-
restart and hysteresis
Application • µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.
Signal GND
PROFET
Load GNDLogicbb
Product Summary Maximum Ratings at Tj = 25 °C unless otherwise specified 3) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters 5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
BTS 432 E2 Protection Functions8)
Diagnostic Characteristics Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation. Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4)
10) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2 * (VON(CL)
VON(CL) - Vbb ), see diagram page 8
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
BTS 432 E2 Input and Status Feedback12) 12) If a ground resistor RGND is used, add the voltage drop across this resistor.
Truth Table L = "Low" Level
H = "High" Level
13) Power Transistor off, high impedance
14) Low resistance short Vbb to output may be detected by no-load-detection
15) No current sink capability during undervoltage shutdown
Terms
PROFETIN
OUT
GND
VSTVIN
ISTINbb
IbbLOUTIGNDONGND
Input circuit (ESD protection) ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current
