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BTS4141N
Smart High Side Switches
BTS 4141N
Smart High-Side Power Switch
1 Channel: 1 x 200mΩ
Features• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Product SummarySOT-223
Application• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
BTS 4141N
Block Diagram3Rin
+ Vbb
Signal GND
ESDiniPROFET®
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifterTemperature
sensorRectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
Load GND
LoadLogic
Overvoltage
protection
BTS 4141N
Maximum Ratingsdefined by PtotAt VIN > Vbb, the input current is not allowed to exceed ±5 mA.defined by PtotDevice on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.not subject to production test, specified by designVLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
BTS 4141N
Electrical Characteristics
Thermal Characteristics
Load Switching Capabilities and CharacteristicsDevice on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.Nominal load current is limited by the current limitation ( see page 5 )
BTS 4141N
Electrical Characteristics
Operating Parameters
Protection Functions2)higher current due temperature sensorIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation
.
BTS 4141N
Electrical Characteristics
Input
Reverse BatteryAt VIN > Vbb, the input current is not allowed to exceed ±5 mA.not subject to production test, guaranted by designdefined by P
BTS 4141N
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage: Vbb = 13.5V Temperature: Ta = 23 ±5°C ;
Load: RL = 220Ω
Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.: RGND
Fast electrical transients
Acc. ISO 7637
The test pulses are applied at Vbb
Definition of functional status
Test circuit:L
Pulse
Bat.
RGND
BTS 4141N
Conducted Emission
Acc. IEC 61967-4 (1Ω / 150Ω method)
Typ. Vbb-Pin Emission at DC-On with 150Ω-matching network
0,11101001000
f / MHz
dBµ
Typ. Vbb-Pin Emission at PWM-Mode with 150Ω-matching network
0,11101001000
f / MHz
Test circuit:
5µH
5µH
RGND
BTS 4141N
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
Direct Power Injection: Forward Power CW
Failure criteria: Amplitude and frequency deviation max. 10% at Out
Typ. Vbb-Pin Susceptibility at DC-On/Off101001000
f / MHz
Typ. Vbb-Pin Susceptibility at PWM-Mode101001000
f / MHz
Test circuit:5µH
5µH
RGND
BTS 4141N
TermsInductive and overvoltage output clamp
+ Vbb
OUT
GNDZON
PROFETOUT
GNDININbbbbLOUTIGNDONGND
VON clamped to 63 V min.
Input circuit (ESD protection)
Overvoltage protection of logic part
GND
GNDR
Signal GNDZ2
optionalThe use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
VZ2=Vbb(AZ)=47V min.,
RI=3 kΩ typ., RGND=150Ω Reverse battery protectionRGND=150Ω, RI=3kΩ typ.,
Temperature protection is not active during inverse
