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BTS412B2
Smart Highside Power Switch
PROFET® BTS 412B2
Smart Highside Power Switch
Features• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis CMOS diagnostic output Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application• μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
Signal GND
PROFET
Load GNDLogic
Product Summary65V4.7 ... 42VRON220mΩ1.8A5A
BTS 412B2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Thermal Characteristics
Parameter and Conditions Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.RI = internal resistance of the load dump test pulse generatorVLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 412B2
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
BTS 412B2Unit
Protection Functions
Diagnostic Characteristics Short circuit current limit for max. duration of td(SC) max=450 μs, prior to shutdown
10)Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
BTS 412B2Unit
Input and Status Feedback11) 11)If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS 412B2
Truth Table412L = "Low" LevelX = don't careZ = high impedance, potential depends on external circuit
H = "High" LevelStatus signal after the time delay shown in the diagrams (see fig 5. page 11...12)
14)Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
TermsV
ISTbb
Input circuit (ESD protection)ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Status outputLogic
GND
Zener diode: 6 V typ., max 5.0 mA, VLogic 5 V typ,
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Short circuit detectionFault Condition: VON > 8.5 V typ.; IN highLogic
unit
BTS 412B2
Inductive and overvoltage output clampGNDPROFET
VON clamped to 68 V typ.
Overvolt. and reverse batt. protectionGND
Signal GNDZ2
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 9 kΩ typ.
Open-load detectionOFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Logic
unitVOUT
Signal GND
OFF
GND disconnectbb
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull upAny kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
loadhigh
Normal load current can be handled by the PROFET
itself.
