BTS410G2 ,PROFET Smart High Side Power SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BTS410H2 ,PROFET Smart High Side Power SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BTS412B2 ,Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BTS4130QGA , Smart High-Side Power Switch
BTS4130QGA , Smart High-Side Power Switch
BTS4130QGA , Smart High-Side Power Switch
BZX84C4V7 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEFeatures
BTS410G2
PROFET Smart High Side Power Switch
PROFET® BTS 410 G2
Smart Highside Power Switch
Features• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis Open drain diagnostic output Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application• μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
Signal GND
PROFET
Load GNDLogic
Product Summary65V4.7 ... 42VRON220mΩ1.8A2.7A
BTS 410 G2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Thermal Characteristics
Parameter and Conditions Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.RI = internal resistance of the load dump test pulse generatorVLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 410 G2
Electrical Characteristics
Load Switching Capabilities and Characteristicston
toff
Operating Parameters BTS 410 G2Unit
Protection Functions
Diagnostic CharacteristicsOpen load detection current
(on-condition)Tj=-40 ..150°C:
Input and Status Feedback10)Input turn-on threshold voltage Tj =-40..+150°C:
Add IST, if IST > 0, add IIN, if VIN>5.5 VRequires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
BTS 410 G2
Truth Table412
L = "Low" LevelX = don't careZ = high impedance, potential depends on external circuit
H = "High" LevelStatus signal after the time delay shown in the diagrams (see fig 5. page 11)
11)Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
BTS 410 G2
TermsVSTVSTbb
Input circuit (ESD protection)ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
Status outputGNDST(ON)
ESD-Zener diode: 6 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Inductive and overvoltage output clampGNDPROFET
VON clamped to 68 V typ.
Overvolt. and reverse batt. protectionGND
Signal GND
PROFET
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN,
RST= 15 kΩ
Open-load detectionON-state diagnostic condition: VON < RON * IL(OL); IN
highLogic
unit
BTS 410 G2
GND disconnectbb
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull upAny kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
loadhigh
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive loadIf other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipationEnergy stored in load inductance:
EL = 1/2·L·I2
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= IL· L
2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL
|VOUT(CL)| )
