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BTS410E2
Smart Highside Power Switch
Smart Highside Power Switch
Features • Overload protection
• Current limitation Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1) Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Signal GND
PROFET
Load GND
VLogic
Product Summary Maximum Ratings at Tj = 25 °C unless otherwise specified
Thermal Characteristics Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters BTS 410 E2 Protection Functions9)
Diagnostic Characteristics Add IST, if IST > 0, add IIN, if VIN>5.5 V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10) Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown
11) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
BTS 410 E2 Input and Status Feedback12) 12) If a ground resistor RGND is used, add the voltage drop across this resistor.
Truth Table L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
13) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
15) No current sink capability during undervoltage shutdown
Terms
PROFETIN
OUT
GNDSTVINSTINbb
IbbLOUTIGNDONGND
Input circuit (ESD protection) I
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
