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BTS410D2
PROFET Smart High Side Power Switch
PROFET® BTS 410 D2
Smart Highside Power Switch
Features• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis CMOS diagnostic output Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application• μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
Signal GND
PROFET
Load GNDLogic
Product Summary65V4.7 ... 42VRON220mΩ1.8A5A
BTS 410 D2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Thermal Characteristics
Parameter and Conditions Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.RI = internal resistance of the load dump test pulse generatorVLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 410 D2
Electrical Characteristics
Load Switching Capabilities and Characteristicston
toff
Operating Parameters BTS 410 D2Unit
Protection Functions
Diagnostic Characteristics Add IST, if IST > 0, add IIN, if VIN>5.5 VShort circuit current limit for max. duration of td(SC) max=450 μs, prior to shutdown
10)Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
BTS 410 D2Unit
Input and Status Feedback11)Input turn-on threshold voltage Tj =-40..+150°C:1.5
11)If a ground resistor RGND is used, add the voltage drop across this resistor.
12)VSt high ≈ Vbb during undervoltage shutdown
13)No current sink capability during undervoltage shutdown
BTS 410 D2
Truth Table412
L = "Low" LevelX = don't careZ = high impedance, potential depends on external circuit
H = "High" LevelStatus signal after the time delay shown in the diagrams (see fig 5. page 11...12)
14)Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
TermsV
ISTbb
Input circuit (ESD protection)ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
Status outputLogic
GND
Zener diode: 6 V typ., max 5.0 mA, VLogic 5 V typ,
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
BTS 410 D2
Short circuit detectionFault Condition: VON > 8.5 V typ.; IN high
Logic
unit
Inductive and overvoltage output clampGNDPROFET
VON clamped to 68 V typ.
Overvolt. and reverse batt. protectionGND
GNDR
Signal GNDZ1
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN,
RST= 15 kΩ
Open-load detectionON-state diagnostic condition: VON < RON * IL(OL); IN
highLogic
unit
GND disconnectbb
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull upAny kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
