BTS3410G ,Smart Low Side SwitchesFeatures Product Summary Logic Level Input Drain source voltage V 42 VDS Input Protection (ESD) O ..
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BTS3410G-BTS3410G .
Smart Low Side Switches
HITFET�� BTS 3410 G
Smart Dual Lowside Power Switch
Product Summary
Features� Logic Level Input
� Input Protection (ESD)
� Thermal shutdown with
auto restart
� Overload protection
� Short circuit protection
� Overvoltage protection
� Current limitation
� Analog driving possible
Application� All kinds of resistive, inductive and capacitive loads in switching
or linear applications
� µC compatible power switch for 12 V DC applications
� Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart SIPMOS� technology. Fully protected by embedded
protection functions.
Vbb
BTS 3410 G
Pin DescriptionPin Configuration (Top view)Vbb
In1
Source1
Drain1
HITFET�
Pin 2
Pin 1
In2
Pin 4
Source2
Drain2
Pin 3
Vbb
Pin 5, 6
Pin 7, 8
BTS 3410 G
Thermal resistancenot subject to production test, specified by design Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 3410 G
Electrical Characteristics
Characteristicsnot subject to production test, specified by designDevice switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
BTS 3410 G
Electrical Characteristics
Dynamic Characteristics
Protection Functions1)
Inverse DiodeIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
BTS 3410 G
Block diagram
Inductive and overvoltage
output clamp
TermsVINVDS
IIN
HITFET
D
Short circuit behaviourInput circuit (ESD protection)DSj
