BTS3134D ,Protected Low Side SwitchGeneral Description
BTS3134D
Protected Low Side Switch
HITFET
= BTS 3134 D
Smart Lowside Power Switch
Product Summary
Features Logic Level Input Input Protection (ESD) Thermal shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Analog driving possible
Application All kinds of resistive, inductive and capacitive loads in switching
or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
BTS 3134 D
Thermal resistance Not tested, specified by design.VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
BTS 3134 D
Electrical Characteristics
Characteristics@ 6 cm2 cooling area
BTS 3134 D
Electrical Characteristics
Dynamic Characteristics
Protection Functions1)
Inverse DiodeIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
BTS 3134 D
HITFETZj
BTS 3134 D
1 Maximum allowable power dissipationtot = f(TC) resp. tot = f(TA) @ RthJA=55 K/W0.5
1.5
tot
2 On-state resistanceON=f(Tj); ID=3A; VIN=10V
10
20
30
40
50
60
70
80
100
DS(on)
3 On-state resistanceON=f(Tj); ID=3A; VIN=5V
10
20
30
40
50
60
70
80
90
110
DS(on)
4 Typ. input threshold voltageIN(th) = f(Tj); ID = 0.7 mA; VDS = 12V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
GS(th)
