BTS3118D ,Smart Low Side SwitchesGeneral Description
BTS3118D
Smart Low Side Switches
HITFET
= BTS 3118 D
Smart Lowside Power Switch
Product Summary
Features Logic Level Input Input Protection (ESD) Thermal shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Analog driving possible
Application All kinds of resistive, inductive and capacitive loads in switching
or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
BTS 3118 D
Thermal resistance Not tested, specified by design.VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
BTS 3118 D
Electrical Characteristics
Characteristics@ 6 cm2 cooling area
BTS 3118 D
Electrical Characteristics
Dynamic Characteristics
Protection Functions1)
Inverse DiodeIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
BTS 3118 D
HITFETZj
BTS 3118 D
1 Maximum allowable power dissipationtot = f(TC) resp. tot = f(TA) @ RthJA=55 K/W0.5
1.5
tot
2 On-state resistanceON = f(Tj); ID=2.2A; VIN=10V
25
50
75
100
125
150
175
225
DS(on)
3 On-state resistanceON = f(Tj); ID=2.2A; VIN=5V
25
50
75
100
125
150
175
200
250
DS(on)
4 Typ. input threshold voltageIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
GS(th)
