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BTS140A ,TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)Dynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = 32 A 12 26 –DS D DS(on)max ..
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BTS140A
TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)
o"''"''"
Infineon
technologies
TEMPFET® BTS140 A
Features
0 N channel
0 Enhancement mode
0 Temperature sensor with thyristor characteristic
0 The drain pin is electrically shorted to the tab
Pin 1 3
Type VDs ID Rosm, Package Ordering Code
BTS 140A 50 V 42 A 0.028 C2 TO-220AB C67078-S5011-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage Vos 50 V
Drain-gate voltage, Rss = 20 k9 VDGR 50
Gate-source voltage Vss ul- 20
Continuous drain current, TC = 65 ot h, 42 A
ISO drain current uso 13.5
To = 85° C, Vee, = 10 V, Vos = 0.5 V
Pulsed drain current, To = 25 oC h, puls 168
Short circuit current, T, = - 55 ... + 150 °C ISC 80
Short circuit dissipation, T, = - 55 ... + 150 CC PSCmaX 1200 W
Power dissipation Ptot 125
Operating and storage temperature range Ti, T stg - 55 ... + 150 °C
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Thermal resistance K/W
Chip-case Re, JC 3 1.0
Chip-ambient RthJA s 75
o"''"''"
Infineon
technologies
TEMPFET® BTS140 A
Electrical Characteristics
at T = 25 "C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(Bmss V
Vss = 0, h, = 0.25 mA 50 - -
Gate threshold voltage VGSW
VGS = VDS, ID = 1 mA 2.5 3.0 3.5
Zero gate voltage drain current I DSS uA
VGS=OV, VDS=50V
T = 25 °C - 0.1 1.0
( = 125 °C - 10 100
Gate-source leakage current I GSS
VGS=i20V7 VDS=O
( = 25 °C - 10 100 nA
T = 150 °C - 2.0 4.0 “A
Drain-source on-state resistance Rome”) n
Vss = 10 V, h, --32 A - 0.024 0.028
Dynamic Characteristics
Forward transconductance gfs S
Vos 2 2 M h, M RDS(on)max1 h, = 32 A 12 26 -
Input capacitance Ciss pF
VGs = 0, Vos = 25 V,f= 1 MHz - 1800 2400
Output capacitance COSS
Vss = 0, Vos = 25 V,f= 1 MHz - 800 1200
Reverse transfer capacitance Css
Vss = 0, Vos = 25 V,f= 1 MHz - 280 450
Turn-on time ton, (ton = td(on) + t,) tdm - 35 50 ns
Vcc--25V,Vss--10V,ho--3A,Rss--50n t - 85 130
Turn-off time u, (ts, = td(ott) + If) td(off) - 220 280
Vcc--25V,Vss--10V,h,--3A,Rss--50n t, - 140 180
2 04.97
