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BTS134D
Smart Low Side Switches
HITFET�� II.Generation BTS 134 D
Smart Lowside Power Switch
Product Summary
Features� Logic Level Input
� Input Protection (ESD)
� Thermal shutdown with
auto restart
� Overload protection
� Short circuit protection
� Overvoltage protection
� Current limitation
� Analog driving possible
Application� All kinds of resistive, inductive and capacitive loads in switching
or linear applications
� µC compatible power switch for 12 V DC applications
� Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart SIPMOS� technology. Fully protected by embedded
protection functions.
Vbb
BTS 134 D
Thermal resistanceFor input voltages beyond these limits I IN has to be limited.not subject to production test, specified by designVLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
BTS 134 D
Electrical Characteristics
Characteristics@ 6 cm2 cooling areaDevice switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
BTS 134 D
Electrical Characteristics
Dynamic Characteristics
Protection Functions1)
Inverse DiodeIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
BTS 134 DDSj
BTS 134 D
1 Maximum allowable power dissipationtot = f(TC) resp. tot = f(TA) @ RthJA=55 K/W0.5
1.5
tot
2 On-state resistanceON=f(Tj); ID=3A; VIN=10V
10
20
30
40
50
60
70
80
100
DS(on)
3 On-state resistanceON=f(Tj); ID=3A; VIN=5V
10
20
30
40
50
60
70
80
90
110
DS(on)
4 Typ. input threshold voltageIN(th) = f(Tj); ID = 0.7 mA; VDS = 12V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
GS(th)
