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BTS130-BTS130E3045A
N-Channel TEMPFET
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TEMPFET®
Features
0 N channel
0 Enhancement mode
0 Temperature sensor with thyristor characteristic
0 The drain pin is electrically shorted to the tab
BTS130
Pin 1 3
Type Floss ID RDSM, Package Ordering Code
BTS 130 50 V 27 A 0.05 f2 TO-220AB C67078-A5001-A3
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 50 V
Drain-gate voltage, RGS = 20 k9 VDGR 50
Gate-source peak voltage, aperiodic Vgs i 20
Continuous drain current, T0 = 25 °C h, 27 A
ISO drain current ID_ISO 7.5
TC = 85 °C, Kss = 10 V, VDS = 0.5V
Pulsed drain current, TC = 25° C h, puls 108
Short circuit current, T, = - 55 ... + 150 o C fsc 80
Short circuit dissipation, T, = - 55 ... + 150 °C PSCmax 1200 W
Power dissipation Ptot 75
Operating and storage temperature range Tj, Tstg - 55 .w. + 150 °C
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Thermal resistance KNV
Chip-case Re, JC 3 1.67
Chip-ambient RthJA f 75
Semiconductor Group 1
SIEMENS BTS130
Electrical Characteristics
at h' = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = 0.25 mA 50 - -
Gate threshold voltage Vegan,
VGS = VDS, ID = 1 mA 2.5 3.0 3.5
Zero gate voltage drain current IDSS WA
VGS=0V, VDS=50V
T, = 25 °C - 1 10
T, = 125 °C - 100 300
Gate-source leakage current IGSS
VGS = 20 V, VDS = 0
T, = 25 °C - 10 100 nA
T, = 150 °C - 2 4 “A
Drain-source on-state resistance RDS(0n) f2
Dynamic Characteristics
Forward transconductance gfs S
VDS 2 2 M ID M RDS(0n)max, ID = 17 A 8.0 13.0 18.0
Input capacitance Ciss PF
' = 0, VDS = 25 V,f= 1 MHz 700 940 1250
Output capacitance Coss
VGS = 0, ' = 25 V,f= 1 MHz - 500 750
Reverse transfer capacitance cu,
VGS=0, VDS=25V,f=1MHz - 180 270
Turn-on time ton, (ton = tam + t,) tum - 25 40 ns
Vcc=30V,Vss=10V,L=3A,RGs=50f2 t - 60 90
Turn-off time toto (ts, = tdm + tr) Mom - 100 130
Vcc= 30V, "ss=10V,h,=3A,RGs=50f2
t, - 75 95
Semiconductor Group 2
