BTS117 ,Smart Low Side SwitchesGeneral DescriptionN channel vertical power FET in Smart SIPMOS chip on chip tech-nology. Fully pr ..
BTS117 ,Smart Low Side SwitchesCharacteristicsParameter Symbol Values Unitat T =25°C, unless otherwise specified min. typ. max.j
BTS117 ,Smart Low Side Switchesapplications• Replaces electromechanical relays and discrete circuits
BTS120 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
BTS130 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)Dynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = 17 A 8.0 13.0 18.0DS D DS( ..
BTS130 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)CharacteristicsDrain-source breakdown voltage V V(BR)DSSV = 0, I = 0.25 mA 50 – –GS DGate threshold ..
BZX84C3V6W-7-F , 200mW SURFACE MOUNT ZENER DIODE
BZX84C3V9 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEFeatures
BTS117
Smart Low Side Switches
HITFET=
BTS 117
Smart Lowside Power Switch
Features• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Application• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Fully protected by embedded protected functions.
BTS 117
Maximum Ratings at Tj = 25 °C unless otherwise specified
Thermal resistance1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 117
Electrical Characteristics
Characteristics1If the input current is limited by external components, low drain currents can flow and heat the device.
BTS 117
Electrical Characteristics
Characteristics
Dynamic Characteristics
Protection Functions
Inverse Diode1Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
BTS 117
Block Diagramm
TermsInductive and overvoltage output clamp
HITFETD
VINDVDS1INbbLHITFET
Short circuit behaviourINDD(SCp)
t 0tmt 2
ID(Lim)
t 1
Input circuit (ESD protection)ESD zener diodes are not designed
for DC current > 2 mA @ VIN>10V.t0: Turn on into a short circuitm: Measurementpoint for ID(lim)1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
BTS 117
On-state resistanceON = f(Tj); ID=3.5A; VIN=10V
25
50
75
100
125
150
200
DS(on)
Maximum allowable power dissipationtot = f(Tc)10
15
20
25
30
35
40
45
55
tot
On-state resistanceON = f(Tj); ID= 3.5A; VIN=5V
25
50
75
100
125
150
175
200
250
DS(on)
Typ. input threshold voltageIN(th) = f(Tj); ID=0.7mA; VDS=12V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
IN(th)
