BTS114A ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electrically shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS114A ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)Dynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I =9 A 5.0 8.0 –DS D DS(on)max ..
BTS117 ,Smart Low Side SwitchesGeneral DescriptionN channel vertical power FET in Smart SIPMOS chip on chip tech-nology. Fully pr ..
BTS117 ,Smart Low Side SwitchesCharacteristicsParameter Symbol Values Unitat T =25°C, unless otherwise specified min. typ. max.j
BTS117 ,Smart Low Side Switchesapplications• Replaces electromechanical relays and discrete circuits
BTS120 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
BZX84C3V6W-7-F , 200mW SURFACE MOUNT ZENER DIODE
BZX84C3V9 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEFeatures
BTS114A
TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)
o"''"''"
Infineon
technologies
TEMPFET® BTS 114 A
Features
0 N channel
0 Enhancement mode
0 Temperature sensor with thyristor characteristic
0 The drain pin is electrically shorted to the tab
Pin 1 3
Type VDs ID Rosm, Package Ordering Code
BTS 114A 50 V 17 A 0.10 n TO-220AB
C67078-85000-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage Vos 50 V
Drain-gate voltage, Rss = 20 k9 VDGR 50
Gate-source voltage Vss ul- 20
Continuous drain current, TC = 27 ot h, 17 A
ISO drain current uso 3.8
To = 85 °C, Vee, =10 V, Vos = 0.5 V
Pulsed drain current, TC = 25 °C h, puls 68
Short circuit current, T, = - 55 ... + 150 °C ISC 37
Short circuit dissipation, T, = - 55 ... + 150 C) C PSCmaX 550 W
Power dissipation Ptot 50
Operating and storage temperature range Ti, T stg - 55 ... + 150 °C
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Thermal resistance K/W
Chip-case Re, JC 3 2.5
Chip-ambient RthJA s 75
o"''"''"
Infineon
technologies
TEMPFET® BTS 114 A
Electrical Characteristics
at T = 25 "C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(Bmss V
Vss = 0, h, = 0.25 mA 50 - -
Gate threshold voltage VGSW
VGS = VDS, ID = 1.0 mA 2.5 3.0 3.5
Zero gate voltage drain current I DSS uA
VGS=OV, VDS=50V
T = 25 °C - 0.1 1.0
( = 125 °C - 10 100
Gate-source leakage current I GSS
Vss = 20 V, Vos = 0
( = 25 °C - 10 100 nA
T = 150 °C - 2 4 ytA
Drain-source on-state resistance Rome”) n
Vss = 10 V, h, = 9.0 A - 0.08 0.10
Dynamic Characteristics
Forward transconductance gfs S
Vos 2 2 M h, M RDS(on)max1 h, =9 A 5.0 8.0 -
Input capacitance Ciss PF
VGS = 0, Vos = 25 V,f= 1 MHz - 450 600
Output capacitance COSS
Vss = 0, Vos = 25 V,f= 1 MHz - 220 350
Reverse transfer capacitance Css
Vss--0, Vos--25 V,f=1 MHz - 85 150
Turn-on time ton, (ton = td(on) + t,) tdm - 20 30 ns
V00: 30 V, Vss--10V,h,--3.0A, t - 4O 60
Rss = 50 Q r
Turn-off time tso (ts, = [d(off) + If) td(0ff) - 55 70
Vcc = 30 V, Vss =10 V, h, = 3.0 A, t, - 4O 60
Rss = 50 Q
2 19.02.04
