BTS113A ,Temperature Protected SwitchDynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = 5.8 A 4.5 7.5 –DS D DS(on) ..
BTS113A ,Temperature Protected Switchcharacteristic3 The drain pin is electrically shorted to the tab 21Pin 1 2 3GD SType V I R Package ..
BTS114A ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electrically shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS114A ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)Dynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I =9 A 5.0 8.0 –DS D DS(on)max ..
BTS117 ,Smart Low Side SwitchesGeneral DescriptionN channel vertical power FET in Smart SIPMOS chip on chip tech-nology. Fully pr ..
BTS117 ,Smart Low Side SwitchesCharacteristicsParameter Symbol Values Unitat T =25°C, unless otherwise specified min. typ. max.j
BZX84C3V6LT1G ,Zener Voltage RegulatorsFeatures• Pb−Free Packages are Available• 225 mW Rating on FR−4 or FR−5 Board3• Zener Breakdown Vol ..
BZX84C3V6W-7-F , 200mW SURFACE MOUNT ZENER DIODE
BZX84C3V9 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEFeatures
BTS113A
Temperature Protected Switch
o"''"''"
Infineon
technologies
TEMPFET® BTS 113 A
Features
0 N channel
0 Logic level
0 Enhancement mode
0 Temperature sensor with thyristor characteristic
0 The drain pin is electrically shorted to the tab
Pin 1 3
Type VDs ID Rosm, Package Ordering Code
BTS 113A 60 V 11.5 A 0.17 n TO-220AB
C67078-S5015-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage Vos 60 V
Drain-gate voltage, Rss = 20 k9 VDGR 60
Gate-source voltage Vss ul- 10
Continuous drain current, TC = 25 ot h, 11.5 A
ISO drain current uso 2.2
To = 85 "C, Vss =10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C h, puls 46
Short circuit current, T, = - 55 ... + 150 °C ISC 27
Short circuit dissipation, T, = - 55 ... + 150 CC PSCmaX 400 W
Power dissipation PM 40
Operating and storage temperature range Ti, T stg - 55 ... + 150 °C
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Thermal resistance K/W
Chip-case Re, JC 3 3.1
Chip-ambient RthJA s 75
o"''"''"
Infineon
technologies
TEMPFET® BTS 113 A
Electrical Characteristics
at T = 25 "C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(Bmss V
Vss = 0, h, = 0.25 mA 60 - -
Gate threshold voltage VGSW
VGS = Vos, ID =1 mA 1.6 2.0 2.5
Zero gate voltage drain current loss 11A
VGS=OV, VDS=6OV
T = 25 °C - 0.1 1.0
( = 125 °C - 10 100
Gate-source leakage current Isss
VGS=i20V7 VDS=O
( = 25 °C - 10 100 nA
T = 150 °C - 2 4 “A
Drain-source on-state resistance Rome”) n
Vss--4.5 V,ID=5.8A - 0.14 0.17
Dynamic Characteristics
Forward transconductance gfs S
Vos 2 2 M h, M RDS(on)max1 h, = 5.8 A 4.5 7.5 -
Input capacitance Ciss PF
VGS = 0, Vos = 25 V,f= 1 MHz - 420 560
Output capacitance COSS
Vss = 0, Vos = 25 V,f=1 MHz - 160 250
Reverse transfer capacitance Css
Vss=0,Vos--25V,f--1MHz - 60 110
Turn-on time ton, (ton = td(on) + t,) tdm - 15 25 ns
Vcc = 30 V, Vss = 5.0 V, h, = 3.0 A, a - 55 80
Rss = 50 Q
Turn-off time tso (ts, = [d(off) + If) td(0ff) - 45 60
Vcc = 30 V, Vss = 5.0 V, h, = 3.0 A, t, - 4O 55
Rss = 50 Q
2 19.02.04
