BTS100 ,P-Channel TEMPFETDynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = – 5 A 1.5 2.3 4.0DS D DS(o ..
BTS110 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic● The drain pin is electrically shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS110 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
BTS112A ,TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electricalIy shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS113A ,Temperature Protected SwitchDynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = 5.8 A 4.5 7.5 –DS D DS(on) ..
BTS113A ,Temperature Protected Switchcharacteristic3 The drain pin is electrically shorted to the tab 21Pin 1 2 3GD SType V I R Package ..
BZX84C3V6-7-F , 350mW SURFACE MOUNT ZENER DIODE
BZX84C3V6LT1 ,SEMICONDUCTOR(TECHNICAL DATA)Maximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BZX84C3V6LT1G ,Zener Voltage RegulatorsFeatures• Pb−Free Packages are Available• 225 mW Rating on FR−4 or FR−5 Board3• Zener Breakdown Vol ..
BZX84C3V6W-7-F , 200mW SURFACE MOUNT ZENER DIODE
BZX84C3V9 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEFeatures
BTS100
P-Channel TEMPFET
SlHiililyfilEli%i;
Smart Highside Power Switch
TEMPFET©
Features
0 Pchannel
o Enhancementmode
0 Temperature sensor with thyristor characteristic
0 The drain pin is electrically shorted to the tab
BTS 100
Pin 1 3
Type Fa, ID RDSM, Package Ordering Code
BTS 100 - 50 V - 8 A 0.3 Q TO-220AB C67078-A5007-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS - 50 V
Drain-gate voltage, RGS = 20 k9 VDGR - 50
Gate-source voltage VGS i 20
Continuous drain current, T0 = 30 °C h, - 8.0 A
ISO drain current ID_ISO - 1.5
TC = 85 'C, "ss = 10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C h, puls - 32
Short circuit current, T, = - 55 ... + 150 °C fsc - 25
Short circuit dissipation, T, = - 55 ... + 150 °C PSCmax 500 W
Power dissipation Ptot 40
Operating and storage temperature range Tj, Tstg - 55 .w. + 150 00
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Thermal resistance KNV
Chip-case Re, JC 3 3.1
Chip-ambient RthJA f 75
Semiconductor Group
SHEMIENS BTS100
Electrical Characteristics
at h' = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0,1D = - 0.25 mA - 50 - -
Gate threshold voltage Vegan,
VGS = VDS, ID = - 1 mA - 2.5 - 3.0 - 3.5
Zero gate voltage drain current IDSS WA
VGs=0V,VDs=-50V
T, = 25 °C - - 1 - 10
Tj=150°C - -100 -300
Gate-source leakage current IGSS
Kss=-201/, VDS=0
Tj=25°C - -10 -100 nA
T, = 150 °C - - 2 - 4 0A
Drain-source on-state resistance RDS(0n) f2
"ss=-101/, fD---5A - 0.25 0.3
Dynamic Characteristics
Forward transconductance gfs S
VDS 2 2 M ID M RDS(0n)max, ID = - 5 A 1.5 2.3 4.0
Input capacitance Ciss pF
VGS=0, FrDs=-25V,f--IMHz - 900 1200
Output capacitance Coss
VGS = 0, ' = - 25 V,f= 1 MHz - 350 550
Reverse transfer capacitance cu,
VGS=0, "os---25V,f=1MHz - 130 230
Turn-on time ton, (ton = tam + t,) tum - 20 30 ns
Vcc=-30V,Vss=-10V,h,=-2.9A, t - 60 95
Rss = 50 f2 r
Turn-off time tom (ts, = tum) + tr) tum) - 70 90
Vcc=-301/,Vss=-10V,hy=-2.9A, t, - 55 75
Rss = 50 C2
Semiconductor Group 2
