BTA412Y-600B ,3Q Hi-Com TriacFeaturesn Very high commutation performance n High immunity to dV/dtn Isolated mounting base n 2500 ..
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BTA412Y-600B-BTA412Y-800B-BTA412Y-800C
3Q Hi-Com Triac
Product profile1.1 General descriptionPassivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data A412Y series B and CA three-quadrant triacs, insulated, high commutation, high
temperature
Rev. 02 — 11 March 2008 Product data sheet Very high commutation performance n High immunity to dV/dt Isolated mounting base n 2500 V RMS isolation voltage High operating junction temperature Heating and cooking appliances n Non-linear rectifier-fed motor loads High power motor control e.g. vacuum
cleaners Electronic thermostats for heating and
cooling loads Solid state relays VDRM≤ 600 V (BTA412Y-600B/C) n IGT≤50 mA (BTA412Y series B) VDRM≤ 800 V (BTA412Y-800B/C) n IGT≤35 mA (BTA412Y series C) IT(RMS)≤12A n ITSM≤ 140 A (t=20 ms)
NXP Semiconductors BT A412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature Pinning information Ordering information Limiting values
Table 1. Pinning main terminal 1 (T1)
SOT78D (TO-220) main terminal 2 (T2) gate (G) mounting base; isolated
sym051
Table 2. Ordering informationBTA412Y-600B TO-220 plastic single-ended package; isolated heatsink mounted;1 mounting hole;
3-lead TO-220
SOT78D
BTA412Y-600C
BTA412Y-800B
BTA412Y-800C
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state voltage BTA412Y-600B; BTA412Y-600C [1]- 600 V
BTA412Y-800B; BTA412Y-800C - 800 V
IT(RMS) RMS on-state current full sine wave; Tmb≤ 116 °C; see
Figure 4 and5
-12 A
ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to
surge; see Figure 2 and3
t = 20 ms - 140 A
t = 16.7 ms - 153 A2 tI2 t for fusing tp = 10 ms - 98 A2s
dIT/dt rate of rise of on-state current ITM=20 A; IG= 0.2A;
dIG/dt= 0.2 A/μs 100 A/μs
IGM peak gate current - 4 A
PGM peak gate power - 5 W
NXP Semiconductors BT A412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature[1] Althoughnot recommended, off-state voltagesupto 800V maybe applied without damage,butthe triac may switchtothe on-state. The
rate of rise of current should not exceed 15 A/μs.
PG(AV) average gate power over any 20 ms period - 1 W
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
Table 3. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors BT A412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
NXP Semiconductors BT A412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature Thermal characteristics Isolation characteristics
Table 4. Thermal characteristicsRth(j-mb) thermal resistance from junctionto
mounting base
full cycle; see Figure6 - - 2.1 K/W
Rth(j-a) thermal resistance from junctionto
ambient
in free air - 60 - K/W
Table 5. Isolation limiting values and characteristicsTh = 25 °C unless otherwise specified.
Visol(RMS) RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;≤65%; clean and dust free - 2500 V
Cisol isolation capacitance frompin2to external heatsink;
f=1MHz
-10 - pF
NXP Semiconductors BT A412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature Static characteristics
Table 6. Static characteristics =25 °C unless otherwise specified.
IGT gate trigger
current =12V; IT= 0.1 A; see Figure8
T2+ G+ 2 - 50 2 - 35 mA
T2+ G− 2 - 50 2 - 35 mA
T2− G− 2 - 50 2 - 35 mA latching current VD =12V; IG= 0.1 A; see Figure10
T2+ G+ - - 60 - - 50 mA
T2+ G− --90 --60 mA
T2− G− --60 --50 mA holding current VD =12V; IG= 0.1 A; see Figure11 --60 --35 mA on-state
voltage=18 A; see Figure9 - 1.3 1.5 - 1.3 1.5 V
VGT gate trigger
voltage =12V; IT= 0.1 A; see Figure7 - 0.8 1.5 - 0.8 1.5 V= 400 V; IT= 0.1 A; Tj= 150°C 0.25 0.4 - 0.25 0.4 - V off-state current VD =VDRM(max); Tj= 125°C - 0.1 0.5 - 0.1 0.5 mA =VDRM(max); Tj= 150°C - 0.4 2 - 0.4 2 mA
