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BTA41-700B-BTB41-700B
STANDARD TRIACS
BTA41 A/B
BTB41 BSTANDARD TRIACS
Symbol Parameter Value UnitIT(RMS) RMS on-state current
(360° conduction angle)
BTA Tc=75 °C40 A
BTB Tc=85 °C45
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)=8.3ms 315 A=10ms 300
I2tI2t value tp=10ms 450 A2s
dI/dt Criticalrateofriseof on-state current
Gate supply:IG= 500mA diG/dt= 1A/μs
Repetitive=50Hz A/μs
Non
Repetitive
Tstg
Storageand operating junction temperature range -40to+15040to+125 Maximum lead temperaturefor soldering during10sat4.5mm
from case
260 °C
TOP3
(Plastic)
A2G HIGH SURGE CURRENT CAPABILITY. COMMUTATION: (dV/dt)c> 10V/μs. BTA Family:
INSULATING VOLTAGE= 2500V(RMS)
(UL RECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA41-...A/B/ BTB41-...B Unit
400 600 700 800VDRM
VRRM
Repetitive peak off-state voltage=125°C
400 600 700 800 V
ABSOLUTE RATINGS (limiting values)
FEATURESThe BTA41 A/B/ BTB41B triac family are high
performance glass passivated PNPN devices.
These parts are suitablesfor general purpose ap-
plications where high surge current capabilityisre-
quired. Application such as phase control and
static switchingon inductiveor resistive load.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value UnitRth (j-a) Junctionto ambient 50 °C/W
Rth(j-c)DC Junctionto caseforDC BTA 1.2 °C/W
BTB 0.8
Rth(j-c)AC Junctionto casefor 360° conduction angleF=50Hz)
BTA 0.9 °C/W
BTB 0.6
Symbol Test Conditions Quadrant Suffix UnitIGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 50 mA MAX 150 100
VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
tgt VD=VDRMIG= 500mA
dIG/dt= 3A/μs
Tj=25°C I-II-III-IV TYP 2.5 μs IG=1.2IGT Tj=25°C I-III-IV TYP 70 60 mA 200 180 *IT= 500mA gate open Tj=25°C MAX 100 80 mATM *ITM= 60A tp= 380μs Tj=25°C MAX 1.8 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj=125°C MAX 6
dV/dt* Linear slopeupto VD=67%VDRM
gate open
Tj=125°C MIN 250 250 V/μs
(dV/dt)c* (dI/dt)c= 18A/ms BTA
(dI/dt)c= 20A/ms BTB
Tj=125°C MIN 10 V/μsFor either polarityof electrodeA2 voltagewith referenceto electrodeA1. (AV) =1W PGM= 40W(tp=20μs) IGM =8A(tp =20μs) VGM=16V(tp=20μs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA41 A/B/ BTB41B
ORDERING INFORMATION
Package IT(RMS) VDRM /VRRM Sensitivity Specification A BBTA
(Insulated) 400 X X
600 X X
700 X X
800 X X
BTB
(Uninsulated) 400 X
600 X
700 X
800 X
Fig.1: Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curvesarecutoffby (dI/dt)c limitation) (BTA)
Fig.2: Correlation between maximum RMS power
dissipationand maximum allowable temperatures (Tamb
and Tcase)for different thermal resistances heatsink+
contact (BTA).
Fig.3: Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curvesarecutoffby (dI/dt)c limitation) (BTB)
Fig.4: Correlation between maximum RMS power
dissipationand maximum allowable temperatures(Tamb
and Tcase)for different thermal resistances heatsink+
contact (BTB).
BTA41 A/B/ BTB41B
Fig.8: Relative variationof gate trigger current and
holding current versus junction temperature.
Fig.9: Non Repetitive surge peak on-state current
versus numberof cycles.
Fig.10: Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t ≤ 10ms, and
corresponding valueofI2t.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7: Relative variationof thermal transient impedance
pulse duration.
Fig.5: RMS on-state current versus case temperature.
(BTA)
Fig.6: RMS on-state current versus case temperature.
(BTB)
BTA41 A/B/ BTB41B
Fig.11: On-state characteristics (maximum values).
PACKAGE MECHANICAL DATATOP3 Plastic
Cooling method:C
Marking: type number
Weight:4.7g
Recommended torque value:0.8 m.N.
Maximum torqur value:1 m.N.
R4.6I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 15.10 15.50 0.594 0.611
20.70 21.10 0.814 0.831
14.30 15.60 0.561 0.615
16.10 16.50 0.632 0.650
3.40 - 0.133 -
4.40 4.60 0.173 0.182
4.08 4.17 0.161 0.164
1.45 1.55 0.057 0.062
0.50 0.70 0.019 0.028
2.70 2.90 0.106 0.115
5.40 5.65 0.212 0.223
1.20 1.40 0.047 0.056
Information furnishedis believedtobe accurateand reliable. However, SGS-THOMSON Microelectronics assumesno responsability
forthe consequencesofuseof such informationnorforany infringementof patentsor other rightsof third parties whichmay
resultfrom itsuse. Nolicense isgranted byimplicationor otherwise underany patent orpatent rights ofSGS-THOMSON Microelectronics.
Specifications mentionedinthis publicationare subjectto change without notice. This publication supersedesand replacesall
information previously supplied.
SGS-THOMSON Microelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
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BTA41 A/B/ BTB41B
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