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BTA316X-600C
3Q Hi-Com Triac
Product profile1.1 General descriptionPassivated, new generation, high commutation triacs in a SOT186A isolated full pack
plastic package
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information A316X series B, C and E
16 A Three-quadrant triacs high commutation
Rev. 01 — 11 April 2007 Product data sheet Very high commutation performance
maximized at each gate sensitivity High immunity to dV/dt High isolation voltage n Wide range of gate sensitivities High power motor control- e.g. washing
machines and vacuum cleaners Refrigeration and air conditioning
compressors Non-linear rectifier-fed motor loads n Electronic thermostats VDRM≤ 600 V (BTA316X-600B/C/E) n IGT≤50 mA (BTA316X series B) VDRM≤ 800 V (BTA316X-800B/C/E) n IGT≤35 mA (BTA316X series C) ITSM≤ 140 A (t=20 ms) n IGT≤10 mA (BTA316X series E) IT(RMS)≤16A
Table 1. Pinning main terminal 1 (T1)
SOT186A (TO-220F) main terminal 2 (T2) gate (G) mounting base; isolated21
sym051
NXP Semiconductors BTA316X series B, C and E
16 A Three-quadrant triacs high commutation Ordering information Limiting values[1] Althoughnot recommended, off-state voltagesupto 800V maybe applied without damage,butthe triac may switchtothe on-state. The
rate of rise of current should not exceed 15 A/μs.
Table 2. Ordering informationBTA316X-600B TO-220F plastic single-ended package; isolated heatsink mounted;1 mounting hole;
3-lead TO-220 ‘full pack’
SOT186A
BTA316X-600C
BTA316X-600E
BTA316X-800B
BTA316X-800C
BTA316X-800E
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state voltage BTA316X-600B; BTA316X-600C;
BTA316X-600E
[1]- 600 V
BTA316X-800B; BTA316X-800C;
BTA316X-800E 800 V
IT(RMS) RMS on-state current full sine wave; Th≤45 °C; see
Figure 4 and5
-16 A
ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to
surge; see Figure 2 and3
t = 20 ms - 140 A
t = 16.7 ms - 150 A2 tI2 t for fusing t = 10 ms - 98 A2s
dIT/dt rate of rise of on-state current ITM=20 A; IG= 0.2A;
dIG/dt= 0.2 A/μs 100 A/μs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature −40 +150 °C junction temperature - 125 °C
NXP Semiconductors BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
NXP Semiconductors BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
NXP Semiconductors BTA316X series B, C and E
16 A Three-quadrant triacs high commutation Thermal characteristics Isolation characteristics
Table 4. Thermal characteristicsRth(j-h) thermal resistance from junctionto
heatsink
full or half cycle without
heatsink compound; see
Figure6 - 5.5 K/W
full or half cycle with
heatsink compound; see
Figure6 - 4.0 K/W
Rth(j-a) thermal resistance from junctionto
ambient
in free air - 55 - K/W
Table 5. Isolation limiting values and characteristicsTh = 25 °C unless otherwise specified.
Visol(RMS) RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;≤65%; clean and dust free - 2500 V
Cisol isolation capacitance frompin2to external heatsink;
f=1MHz
-10 - pF
NXP Semiconductors BTA316X series B, C and E
16 A Three-quadrant triacs high commutation Static characteristics
Table 6. Static characteristics =25 °C unless otherwise specified.
IGT gate trigger
current =12V;= 0.1A;
see Figure8
T2+ G+ 2 - 50 2 - 35 - - 10 mA
T2+ G− 2 - 50 2 - 35 - - 10 mA
T2− G− 2 - 50 2 - 35 - - 10 mA latching current VD =12V;
IGT= 0.1A;
see Figure10
T2+ G+ - - 60 - - 50 - - 25 mA
T2+ G− --90 --60 --30 mA
T2− G− --60 --50 --30 mA holding current VD =12V;
IGT= 0.1A;
see Figure11
--60 --35 --15 mA on-state
voltage =18A;
see Figure9 1.3 1.5 - 1.3 1.5 - 1.3 1.5 V
VGT gate trigger
voltage =12V;= 0.1A;
see Figure7 0.8 1.5 - 0.8 1.5 - 0.8 1.5 V= 400V;= 0.1A;= 125°C
0.25 0.4 - 0.25 0.4 - 0.25 0.4 - V off-state current VD =VDRM(max);= 125°C 0.1 0.5 - 0.1 0.5 - 0.1 0.5 mA
NXP Semiconductors BTA316X series B, C and E
16 A Three-quadrant triacs high commutation Dynamic characteristics
Table 7. Dynamic characteristicsdVD/dt rate of rise of
off-state
voltage
VDM= 0.67×
VDRM(max);= 125 °C;
exponential
waveform; gateopen
circuit
1000- - 500 - - 60 - - V/μs
dIcom/dt rateof change
commutating
current
VDM= 400V;= 125 °C;
IT(RMS) =16A;
without snubber;
gate open circuit - - 15 - - 5 - - A/ms
VDM= 400V;= 125 °C;
IT(RMS) =16A;
dV/dt=10 V/μs;
gate open circuit - - - - - 8 - - A/ms
VDM= 400V;= 125 °C;
IT(RMS) =16A;
dV/dt=1V/μs; gate
open circuit - - - - - 12 - - A/ms
tgt gate-controlled
turn-on time
ITM =20A; =VDRM(max);= 0.1A;
dIG/dt=5A/μs - - 2 - -2 - μs
