BTA312X-600B ,3Q Hi-Com TriacApplicationsElectronic thermostats (heating and cooling)•• High power motor controls e.g. washing m ..
BTA312X-600C ,3Q Hi-Com TriacApplicationsElectronic thermostats (heating and cooling)•• High power motor controls e.g. washing m ..
BTA316-600C , 16 A Three-quadrant triacs high commutation
BTA316-600C , 16 A Three-quadrant triacs high commutation
BTA316X-600B , 16 A Three-quadrant triacs high commutation
BTA316X-600C ,3Q Hi-Com TriacApplicationsn High power motor control - e.g. washing n Refrigeration and air conditioningmachines ..
BZX84C15 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEELECTRICAL CHARACTERISTICS (TA=25 degree C unless otherwise noted) VF=1.2V max, IF=100mA for all ty ..
BZX84-C15 ,Voltage regulator diodesGeneral descriptionLow-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted D ..
BZX84C15ET1G , Zener Voltage Regulators 225 mW SOT−23 Surface Mount
BZX84C15LT1 ,Small Signal +5% 15VTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitCASE 318-07, STYLE 8SOT-23 (TO-236AB)Total Dev ..
BZX84C15S-7-F , DUAL 200mW SURFACE MOUNT ZENER DIODE
BZX84C15T-7-F , 150mW SURFACE MOUNT ZENER DIODE
BTA312X-600B
3Q Hi-Com Triac
A312X-600B3Q Hi-Com Triac5 October 2012 Product data sheet Product profile
1.1 General descriptionPlanar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "fullpack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current atthe maximum rated junction temperature without the aid of a snubber.
1.2 Features and benefits 3Q technology for improved noise immunity• High commutation capability with maximum false trigger immunity• High voltage capability• Isolated mounting base package• Less sensitive gate for highest noise immunity• Planar passivated for voltage ruggedness and reliability• Triggering in three quadrants only• Very high immunity to false turn-on by dV/dt
1.3 Applications Electronic thermostats (heating and cooling)• High power motor controls e.g. washing machines and vacuum cleaners• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max UnitVDRM repetitive peak off-state voltage - - 600 V
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 100 A
IT(RMS) RMS on-state current full sine wave; Th ≤ 59 °C; Fig. 1; Fig. 2;
Fig. 3 - 12 A
Static characteristics - 50 mA
NXP Semiconductors BTA312X-600B
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max UnitVD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - 50 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 50 mA
Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate21
TO-220F (SOT186A)sym051
Ordering information
Table 3. Ordering information
Name Description VersionBTA312X-600B TO-220F plastic single-ended package; isolated heatsink mounted; 1mounting hole; 3-lead TO-220 "full pack" SOT186A
BTA312X-600B/L01 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max UnitVDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 59 °C; Fig. 1; Fig. 2;
Fig. 3 12 A 100 A
NXP Semiconductors BTA312X-600B
3Q Hi-Com Triac
Symbol Parameter Conditions Min Max Unitfull sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 110 A2t I2 t for fusing tp = 10 ms; SIN - 50 A2s
dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
003aab679
-50 0 50 100 150Th (°C)
IT(RMS)
(A)
Fig. 1. RMS on-state current as a function of heatsinktemperature; maximum values003aab681
100-2 10-1 1 10surge duration(s)
IT(RMS)
(A)
f = 50 Hz; Th = 59 °C
Fig. 2. RMS on-state current as a function of surgeduration; maximum values
NXP Semiconductors BTA312X-600B
3Q Hi-Com Triac003aab690 3 6 9 12IT(RMS)(A)
Ptot
(W)= 180°
120°
90°
60°
30°
conductionangle(degrees)
formfactora60901201802.82.21.91.57
α = conduction angle
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values003aab80623-5 10-4 10-3 10-2 10-1
tp(s)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
(1)
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
NXP Semiconductors BTA312X-600B
3Q Hi-Com Triac003aab809
120 10 102 103number of cycles (n)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unitfull cycle or half cycle; with heatsink
compound; Fig. 6 - 4 K/WRth(j-h) thermal resistance
from junction toheatsink full cycle or half cycle; without heatsinkcompound; Fig. 6 - - 5.5 K/W
Rth(j-a) thermal resistance
from junction toambient
in free air - 55 - K/W
NXP Semiconductors BTA312X-600B
3Q Hi-Com Triac003aab672
Zth(j-h)
(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
(1)(2)
(3)(4)
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max UnitVisol(RMS) RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dustfree ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
Th = 25 °C - 2500 V
Cisol isolation capacitance from main terminal 2 to external
heatsink ; f = 1 MHz; Th = 25 °C 10 - pF
Max Unit 50 mA 50 mA 50 mA