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BTA312-600E
3Q Hi-Com Triac
A312-600E3Q Hi-Com Triac4 October 2012 Product data sheet Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plasticpackage. This "series E" triac balances the requirements of commutation performanceand gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with lowpower drivers including microcontrollers.
1.2 Features and benefits 3Q technology for improved noise immunity• Direct interfacing with low power drivers and microcontrollers• Good immunity to false turn-on by dV/dt• High commutation capability with sensitive gate• High voltage capability• Planar passivated for voltage ruggedness and reliability• Sensitive gate for easy logic level triggering• Triggering in three quadrants only
1.3 Applications Electronic thermostats (heating and cooling)• High power motor controls e.g. washing machines and vacuum cleaners
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage - 600 V
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 100 A
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3 - 12 A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+; - 10 mAIGT gate trigger current - 10 mA
NXP Semiconductors BTA312-600E
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 10 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate T2 mounting base; mainterminal 22
TO-220AB (SOT78)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA312-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB SOT78 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3 12 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 100 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 110 A - 50 A2s - 100 A/µs
NXP Semiconductors BTA312-600E
3Q Hi-Com Triac
Symbol Parameter Conditions Min Max Unit
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
003aab686
-50 0 50 100 150Tmb(°C)
IT(RMS)
(A)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
003aab687-2 10-1 1 10surge duration(s)
IT(RMS)
(A)
f = 50 Hz; Tmb = 100 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
003aab690 12
Ptot
(W)= 180°
120°
90°
60°
30°
conductionangle(degrees)
formfactora60901201802.82.21.91.57
NXP Semiconductors BTA312-600E
3Q Hi-Com Triac
003aab80623-5 10-4 10-3 10-2 10-1tp(s)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
(1)
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab809
120 10 102 103number of cycles (n)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues Max Unit 1.5 K/W 2 K/W - K/W
NXP Semiconductors BTA312-600E
3Q Hi-Com Triac
003aab775
Zth(j-mb)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
(1)
(2)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 - 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - 10 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 10 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 - 25 mA
VD = 12 V; IG = 0.1 A; T2+ G-; - 30 mA latching current 25 mA 15 mA 1.6 V 1.5 V - V 0.5 mA
NXP Semiconductors BTA312-600E
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit - - V/µs
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit - - A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 10 V/µs; gate open circuit - - A/ms
dIcom/dt rate of change of commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 1 V/µs; gate open circuit - - A/ms
Tj (°C)-50 1501000 50
003aag894
(1)
(2)
(3)
IGT
IGT(25°C)
(1) T2- G-(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Tj (°C)-50 1501000 50
003aag895
IL(25°C)
Fig. 8. Normalized latching current as a function ofjunction temperature

Partno	Mfg	Dc	Qty	Available	Descript
BTA312-600E \|BTA312600E	0549	N/a	619	avai	3Q Hi-Com Triac