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BTA312-600CT
3Q Hi-Com Triac
A312-600CT3Q Hi-Com Triac4 October 2012 Product data sheet Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB)plastic package intended for use in circuits where high static and dynamic dV/dt andhigh dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber. It is used
in applications where "high junction operating temperature capability" is required.
1.2 Features and benefits 3Q technology for improved noise immunity• High commutation capability with maximum false trigger immunity• High immunity to false turn-on by dV/dt• High junction operating temperature capability• High voltage capability• Less sensitive gate for high noise immunity• Planar passivated for voltage ruggedness and reliability• Triggering in three quadrants only
1.3 Applications Applications subject to high temperature• Electronic thermostats (heating and cooling)• High power motor controls e.g. washing machines and vacuum cleaners• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage - - 600 V
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 100 A junction temperature - - 150 °C
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 125 °C; Fig. 1; - 12 A
NXP Semiconductors BTA312-600CT
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 6 - 35 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 6 - 35 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 6 - 35 mA Pinning information
Table 2. Pinning information T1 main terminal 1 T2 main terminal 2 G gate T2 mounting base; main
terminal 22
TO-220AB (SOT78)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA312-600CT TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB SOT78 Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 125 °C; Fig. 1; 12 A
NXP Semiconductors BTA312-600CT
3Q Hi-Com Triac
Symbol Parameter Conditions Min Max Unit
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 100 AITSM non-repetitive peak on-statecurrent
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 110 A2t I2 t for fusing tp = 10 ms; SIN - 50 A2s
dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 150 °C
003aab688
-50 0 50 100 150Tmb (°C)
IT(RMS)
(A)
Fig. 1. RMS on-state current as a function of mountingbase temperature; maximum values
003aaf738-2 10-1 1 10surge duration(s)
IT(RMS)
(A)
f = 50 Hz; Tmb = 125 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
NXP Semiconductors BTA312-600CT
3Q Hi-Com Triac
003aab808 3 6 9 12IT(RMS)(A)
Ptot
(W) α= 180°
120°
90°
60°°
conductionangle(degrees)
formfactora60901201802.82.21.91.57
α = conduction angle
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
003aab80623-5 10-4 10-3 10-2 10-1
tp(s)
ITSM(A)
ITSM
Tj(init) = 25 °C max
(1)
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
NXP Semiconductors BTA312-600CT
3Q Hi-Com Triac
003aab809
120 10 102 103number of cycles (n)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle - - 1.5 K/WRth(j-mb) thermal resistance
from junction tomounting base half cycle - - 2 K/W
Rth(j-a) thermal resistance
from junction toambient
in free air - 60 - K/W Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit 35 mA 35 mA 35 mA 50 mA
NXP Semiconductors BTA312-600CT
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - 60 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 50 mA holding current VD = 12 V; Tj = 25 °C; Fig. 8 - - 35 mA on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 - 0.8 1.5 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 150 °C;
Fig. 9
0.25 0.4 - V off-state current VD = 600 V; Tj = 150 °C - 0.4 2 mA
Dynamic characteristics
dVD/dt rate of rise of off-statevoltage VDM = 402 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
300 - - V/µs
VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit - - A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A;
dVcom/dt = 10 V/µs; gate open circuit - - A/ms
dIcom/dt rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A;
dVcom/dt = 1 V/µs; gate open circuit - - A/ms
003aag899
(1)
(2)
(3)
IGT
IGT(25°C)
Tj (°C)-50 1501000 50
003aag900IL(25°C)
Fig. 7. Normalized latching current as a function ofjunction temperature

Partno	Mfg	Dc	Qty	Available	Descript
BTA312-600CT \|BTA312600CT	0549	N/a	310	avai	3Q Hi-Com Triac