BTA24-600B Fast Delivery |IC PHOENIX CO.,LIMITED

BTA24-600B ,25A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI RMS on-state current (full sine wave) AT(RMS)D ..
BTA24-600B ,25A TRIACSapplications such as static relays,A2Gheating regulation, water heaters, induction motorstarting ci ..
BTA24-600BW ,25A TRIACSapplications such as static relays,A2Gheating regulation, water heaters, induction motorstarting ci ..
BTA24-600BWRG ,25A TRIACSBTA/BTB24, BTA25, BTA26and T25 Series®SNUBBERLESS™ & STANDARD 25A TRIACS ..
BTA24-600CW ,25A TRIACSFEATURES:A2A2Symbol Value UnitGI25 AT(RMS)A1V /V600 and 800 VDRM RRMA1A1A2A2GGIGT (Q ) 35 to 50 mA1 ..
BTA24-600CWRG ,25A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI RMS on-state current (full sine wave) D²PAK AT ..
BZX84-C12 ,Voltage regulator diodesFEATURES PINNING• Total power dissipation:PIN DESCRIPTIONmax. 250 mW1 anode• Three tolerance series ..
BZX84-C12 ,Voltage regulator diodesFeatures and benefits  Total power dissipation:  250 mW Working voltage range: nominal 2.4 V to ..
BZX84C12-7-F , 350mW SURFACE MOUNT ZENER DIODE
BZX84C12ET1G , Zener Voltage Regulators 225 mW SOT−23 Surface Mount
BZX84C12LT1 ,225 mW SOT-23 Zener Voltage Regulator Diodesmount plastic SOT−23 package. These devices are designed to providevoltage regulation with minimum ..
BZX84C12LT1G ,Small Signal +5% 12V ZenerMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..

BTA24-600B
25A TRIACS
1/9
BTA/BTB24, BTA25, BTA26
and T25 Series
SNUBBERLESS& STANDARD 25A TRIACS
September 2000- Ed:3
MAIN FEATURES:
DESCRIPTION
Available eitherin through-holeof surface and T25
mount packages, the BTA/BTB24-25-26 triac
seriesis suitable for general purpose AC power
switching. They can be used as an ON/OFF
functionin applications such as static relays,
heating regulation, water heaters, induction motor
starting circuits...or for phase control operationin
high power motor speed controllers, soft start
circuits...The snubberless versions (BTA/BTB...W
and T25 series) are specially recommended for
use on inductive loads, thanks to their high
commutation performances. using aninternal ceramic pad, the BTA series
provides voltage insulated tab (ratedat 2500V
RMS) complying with UL standards (File ref.:
E81734).
Symbol Value Unit T(RMS) 25 A
VDRM/VRRM 600 and 800 VGT (Q1) 35to50 mA
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit T(RMS) RMS on-state current (full sine wave) D PAK
TO-220AB Tc= 100°C
RD91
TOP3 Ins. Tc= 90°C
TO-220AB Ins. Tc= 75°C TSM Non repetitive surge peak on-state
current (full cycle,Tj initial= 25°C)=60Hz t= 16.7ms 260 A=50Hz t=20ms 250 tI t Valuefor fusing tp=10ms 450 A s
dI/dt Critical rateof riseof on-state current =2 xIGT,tr≤ 100ns F= 120Hz Tj= 125°C50 A/μs DSM/V RSM Non repetitive surge peak off-state
voltage tp=10ms Tj= 25°C V DRM/V RRM 100 V
IGM Peak gate current tp=20μs Tj= 125°C4 A G(AV) Average gate power dissipation Tj= 125°C1 Wstgj
Storage junction temperature range
Operating junction temperature range40to+ 15040to+ 125 °CA1
TO-220AB
(BTB24)
TO-220AB
Insulated
(BTA24)
TOP3
Insulated
(BTA26)A2G2 PAK
(T25G)
RD91
(BTA25)
BTA/BTB24, BTA25, BTA26 and T25 Series
2/9
ELECTRICAL CHARACTERISTICS(Tj= 25°C, unless otherwise specified) SNUBBERLESS(3 Quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W STANDARD(4 Quadrants): BTA25...B, BTA26...B
STATIC CHARACTERISTICS
Note 1:minimum IGTis guarantedat5%ofIGT max.
Note 2:for both polaritiesofA2 referencedtoA1
Symbol Test Conditions Quadrant T25 BTA/BTB Unit
T2535 CW BWGT(1)D =12V RL =33Ω I-II-III MAX. 35 35 50 mAGT I-II-III MAX. 1.3 VGD VD =VDRM RL= 3.3kΩ Tj= 125°CI-II-III MIN. 0.2 VH(2) IT= 500 mA MAX. 50 50 75 mA IG= 1.2 IGT I-III MAX. 70 70 80 mA 80 80 100
dV/dt(2) VD =67% VDRM gate open Tj= 125°C MIN. 500 500 1000 V/μs
(dI/dt)c(2) Without snubber Tj= 125°C MIN. 13 13 22 A/ms
Symbol Test Conditions Quadrant Value Unit
IGT(1)D =12V RL =33ΩII-III MAX. 50
VGT ALL MAX. 1.3 V
VGD VD =VDRM RL= 3.3kΩ Tj= 125°C ALL MIN. 0.2 V(2) IT= 500 mA MAX. 80 mA IG=1.2 IGT I-III-IV MAX. 70 mA 160
dV/dt(2) VD =67% VDRM gate open Tj= 125°C MIN. 500 V/μs
(dV/dt)c(2) (dI/dt)c= 13.3 A/ms Tj= 125°C MIN. 10 V/μs
Symbol Test Conditions Value UnitTM(2) ITM =35A tp =380μs Tj= 25°C MAX. 1.55 V
Vto(2) Threshold voltage Tj= 125°C MAX. 0.85 Vd(2) Dynamic resistance Tj= 125°C MAX. 16 mΩ
IDRM
IRRM
VDRM =VRRM Tj= 25°C
MAX. μA= 125°C3 mA
BTA/BTB24, BTA25, BTA26 and T25 Series
3/9
THERMAL RESISTANCES Copper surface undertab
PRODUCT SELECTOR
BTB: Non insulated TO-220AB package
ORDERING INFORMATION
Symbol Parameter Value Unit
Rth(j-c) Junctionto case (AC) D PAK
TO-220AB 0.8 °C/W
RD91 (Insulated)
TOP3 Insulated 1.1
TO-220AB Insulated 1.7
Rth(j-a) Junctionto ambient S=1cm D PAK 45 °C/W
TOP3 Insulated 50
TO-220AB 60TO-220AB Insulated
Part Number
Voltage (xxx)
Sensitivity Type Package
600V 800V
BTB24-xxxB X X 50 mA Standard TO-220AB
BTA/BTB24-xxxBW X X 50 mA Snubberless TO-220AB
BTA/BTB24-xxxCW X X 35 mA Snubberless TO-220AB
BTA25-xxxB X X 50 mA Standard RD-91
BTA25-xxxBW X X 50 mA Snubberless RD-91
BTA25-xxxCW X X 35 mA Snubberless RD-91
BTA26-xxxB X X 50 mA Standard TOP3 Ins.
BTA26-xxxBW X X 50 mA Snubberless TOP3 Ins.
BTA26-xxxCW X X 35 mA Snubberless TOP3 Ins.
T2535-xxxG X X 35 mA Snubberless D PAK A 24 - 600 BW
TRIAC
SERIES
INSULATION: insulated non insulated
CURRENT:
24: 25Ain TO-220AB
25: 25Ain Rd91
26: 25Ain TOP3
SENSITIVITY &TYPE 50mA STANDARD
BW: 50mA SNUBBERLESS
CW: 35mA SNUBBERLESS
VOLTAGE:
600: 600V
800: 800V
BTA/BTB24, BTA25, BTA26 and T25 Series
4/9
OTHER INFORMATION
Note: xxx= voltage,y= sensitivity,z= type
Part Number Marking Weight Base
quantity
Packing
mode
BTA/BTB24-xxxyz BTA/BTB24xxxyz 2.3g 250 Bulk
BTA25-xxxyz BTA25xxxyz 20g 25 Bulk
BTA26-xxxyz BTA26xxxyz 4.5g 120 Bulk
T2535-xxxG T2535xxxG 1.5g 50 Tube
T2535-xxxG-TR T2535xxxG 1.5g 1000 Tape& reel 25 35 - 600 G (-TR)
TRIAC
SERIES
SENSITIVITY:
35: 35mA
VOLTAGE:
600: 600V
800: 800V
CURRENT: 25A
PACKAGE:D PAK2
PACKING MODE:
Blank:Tube
-TR:Tape& Reel
BTA/BTB24, BTA25, BTA26 and T25 Series
5/9
Fig.1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
Fig. 2-2: D PAK RMS on-state current versus
ambient temperature (printed circuit board FR4,
copper thickness:35 μm), full cycle.
Fig.3: Relative variationof thermal impedance
versus pulse duration.
Fig. 4: On-state characteristics (maximum
values).
Fig. 5: Surge peak on-state current versus
numberof cycles. 5 10 15 20 250
IT(RMS)(A) (W) 25 50 75 100 1250
Tc(°C)
IT(RMS)(A)
BTA24
BTB/T25
BTA25/26 25 50 75 100 1250.0
Tamb(°C)
IT(RMS)(A)
DPAK
(S=1cm)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21E-3
1E-2
1E-1
1E+0(s)
K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
BTA/BTB24/T25
Zth(j-a)
BTA26
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.51
VTM(V)
ITM(A)
Tj=25°C
Tjmax
Tjmax.
Vto=0.85V
Rd=16mΩ 10 100 10000
Numberof cycles
ITSM(A)
Nonrepetitive
Tjinitial=25°C
Repetitive
Tc=75°C
Onecycle
t=20ms
BTA/BTB24, BTA25, BTA26 and T25 Series
6/9
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width< 10ms, and corresponding valueof I t.
Fig.7: Relative variationof gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8: Relative variation of critical rate of
decreaseof main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10: D PAK Thermal resistance junctionto
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness:35 μm).
0.01 0.10 1.00 10.00100
3000 (ms)
ITSM (A),I t (A s) initial=25°C
ITSM
I t
dI/dtlimitation:
50A/μs
-40 -20 0 20 40 60 80 100 120 1400.0
Tj(°C)
IGT,IH,IL[Tj]/ IGT,IH,IL[Tj=25°C]
IGT
IH&IL
0.1 1.0 10.0 100.00.4
(dV/dt)c (V/μs)
(dI/dt)c [(dV/dt)c]/ Specified (dI/dt)c
BW/CW/T2535 25 50 75 100 1250 (°C)
(dI/dt)c[Tj]/ (dI/dt)c[Tj specified] 4 8 1216 20242832 36400
S(cm )
Rth(j-a) (°C/W)
D PAK

Partno	Mfg	Dc	Qty	Available	Descript
BTA24-600B \|BTA24600B		N/a	50	avai	25A TRIACS
BTA24-600B \|BTA24600B	ST	N/a	1000	avai	25A TRIACS