BTA225-600B ,3Q Hi-Com TriacPIN CONFIGURATION SYMBOLPIN DESCRIPTIONtab1 main terminal 1T2 T12 main terminal 23 gateG123tab main ..
BTA225-800B ,Three quadrant triacs high commutationGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated high commutation SYMBOL PARAMETER MAX. MAX ..
BTA225B-600B ,Three quadrant triacs high commutationGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated high commutation SYMBOL PARAMETER MAX. MAX ..
BTA225B-800B ,3Q Hi-Com Triac
BTA225B-800B ,3Q Hi-Com Triac
BTA24-600B ,25A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI RMS on-state current (full sine wave) AT(RMS)D ..
BZX84C12 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCE
BZX84C12 ,Voltage regulator diodesFEATURES PINNING• Total power dissipation:PIN DESCRIPTIONmax. 250 mW1 anode• Three tolerance series ..
BZX84-C12 ,Voltage regulator diodesDISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BZX84 seriesVoltage regulator diodes1999 May 1 ..
BZX84-C12 ,Voltage regulator diodesDISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BZX84 seriesVoltage regulator diodes1999 May 1 ..
BZX84-C12 ,Voltage regulator diodesFEATURES PINNING• Total power dissipation:PIN DESCRIPTIONmax. 250 mW1 anode• Three tolerance series ..
BZX84-C12 ,Voltage regulator diodesFeatures and benefits Total power dissipation: 250 mW Working voltage range: nominal 2.4 V to ..
BTA225-600B-BTA225-800B
3Q Hi-Com Triac
NXP Semiconductors Product specification
Three quadrant triacs
high commutation BT A225 series B
GENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated high commutation
SYMBOL PARAMETER MAX. MAX. MAX. UNITtriacsina plastic envelope intendedfor useincircuitswherehigh staticand
BTA225- 500B 600B 800Bdynamic dV/dt and high dI/dt can VDRM Repetitive peak off-state 500 600 800 Voccur loads. These devices will voltagescommutate the full rated rms current I T(RMS) RMS on-state current 25 25 25 Aat the maximum rated junction ITSM Non-repetitive peak on-state 190 190 190 Atemperature, without the aid ofa currentsnubber.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
tab main terminal 2
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800 - 6001 6001 800 V - 25 AITSM Non-repetitive peakon-state current - 190 A - 209 A - 180 A2s 100 A/μs - 2 A - 5 V - 5 W - 0.5 W -40 150 ˚C - 125 ˚CT2123
tab
NXP Semiconductors Product specification
Three quadrant triacs
high commutation BT A225 series B
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance full cycle - - 1.0 K/Wjunction to mounting base half cycle - - 1.4 K/WRth j-a Thermal resistance in free air - 60 - K/Wjunction to ambient
STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITGT Gate trigger current2 VD = 12 V; IT = 0.1 A T2+ G+ 2 18 50 mAT2+ G- 2 21 50 mAT2- G- 2 34 50 mAIL Latching current VD = 12 V; IGT = 0.1 A T2+ G+ - 31 60 mAT2+ G- - 34 90 mAT2- G- - 30 60 mAIH Holding current VD = 12 V; IGT = 0.1 A - 31 60 mAVT On-state voltage IT = 30 A - 1.3 1.55 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 VVD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - VID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITdVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 1000 4000 - V/μsoff-state voltage exponential waveform; gate open circuitdIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 25 A; - 44 - A/mscommutating current without snubber; gate open circuittgt Gate controlled turn-on ITM = 30 A; VD = VDRM(max); IG = 0.1 A; - 2 - μstime dIG/dt = 5 A/μs
2 Device does not trigger in the T2-, G+ quadrant.
NXP Semiconductors Product specification
Three quadrant triacs
high commutation BT A225 series B
Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, forsinusoidal currents, tp ≤ 20ms.
Fig.4. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidalcurrents, f = 50 Hz; Tmb ≤ 91˚C. 5 10 15 20 25 300
= 180
BTA140
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500 BTA140
91 C
Tmb / C
IT(RMS) / A
10us 100us10
1000 BTA225
ITSM / A
Tj initial = 25 C max
dI /dt limitT
0.01 0.1 1 100 BTA140
surge duration / s
IT(RMS) / A
1.6 BT136
VGT(Tj)
VGT(25 C)
NXP Semiconductors Product specification
Three quadrant triacs
high commutation BT A225 series B
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versuspulse width tp.
-50 0 50 100 1500
2.5 BTA216
Tj / C
T2+ G+
T2+ G-
T2- G-
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30 BTA140
VT / V
IT / A
Tj = 125 CTj = 25 C
Vo = 1.073 VRs = 0.015 ohms
typ max
-50 0 500
2.5 TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.1 BTA140
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10sP
bidirectional
unidirectional
2.5 TRIAC
IH(Tj)
IH(25C) 120 140
dIcom/dt (A/ms)
NXP Semiconductors Product specification
Three quadrant triacs
high commutation BT A225 series B
MECHANICAL DATA2,8
2,4
0,6
5,9min
15,8max
