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BTA216X-600D-BTA216X-600E-BTA216X-600F
Three quadrant triacs guaranteed commutation
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATAPassivated guaranteed commutation triacs
SYMBOL PARAMETER MAX. UNITa full pack, plastic envelope intendedforusein motor control circuitsor with other
BTA216X- 600Dhighly inductive loads. These devices
BTA216X- 600Ebalance the requirementsof commutation
BTA216X- 600Fperformance and gate sensitivity. The VDRM Repetitive peak off-state voltages 600 V
"sensitive gate"E series and "logic level"D RMS on-state current
series are intendedfor interfacing with low IT(RMS) Non-repetitive peak on-state 16 Apower drivers, including micro controllers. ITSM current 140 A
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
case isolated
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVDRM Repetitive peak off-state - 6001 V
voltages
IT(RMS) RMS on-state current full sine wave; - 16 A
Ths ≤ 38 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 140 A
t = 16.7 ms - 150 A2 tI2 t for fusing t = 10 ms - 98 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
case
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITVisol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216X- ...D ...E ...FIGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40 mA Holding current VD = 12 V; IGT = 0.1 A - 15 25 30 mA
...D, E, F On-state voltage IT = 20 A - 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.5 mA
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series D, E and F
guaranteed commutation
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216X- ...D ...E ...FdVD/dt Critical rate of rise of VDM = 67% V DRM(max) ;30 60 70 - V/μs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 2.5 6.2 18 - A/ms
commutating current IT(RMS) = 16 A;dVcom /dt = 10V/μs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 12 20 50 - A/mscommutating current I T(RMS) = 16 A;
dVcom/dt = 0.1V/μs; gate
open circuit
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 38˚C.
Fig.6. Normalised gate trigger voltage 5 10 15 200
IT(RMS) / A
Ptot / W Ths(max) / C
-50 0 50 100 1500
Ths / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
Number of cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Minimum, critical rate of change of
commutating current dIcom/dt versus junction
-50 0 50 100 150
Tj/°CIGT(25°C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-hs (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C)
100 40 60 80 100 120 140
Tj/˚C
dIcom/dt (A/ms)
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series D, E and F
guaranteed commutation
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
1.3
