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BTA216-600D
Three quadrant triacs guaranteed commutation
Philips Semiconductors Product specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutationtriacsin SYMBOL PARAMETER MAX. UNIT plastic envelope intendedfor usein motorcontrol circuitsor with other highly inductive BTA216- 600D
loads. These devices balance the BTA216- 600E
requirementsof commutation performance BTA216- 600Fand gate sensitivity. The "sensitive gate"E VDRM Repetitive peak off-state 600 V
series and "logic level"D series are intended voltages
for interfacing with low power drivers, IT(RMS) RMS on-state current 16 Aincluding micro controllers. ITSM Non-repetitive peak on-state 140 A
current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM Repetitive peak off-state - 6001 V
voltages
IT(RMS) RMS on-state current full sine wave; - 16 A
Tmb ≤ 99 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 140 A
t = 16.7 ms - 150 A2 tI2 t for fusing t = 10 ms - 98 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; - 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
tab
Philips Semiconductors Product specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICSj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216- ...D ...E ...F
IGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40 mA Holding current VD = 12 V; IGT = 0.1 A - 15 25 30 mA
...D, E, FT On-state voltage IT = 20 A - 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 - VTj = 125 ˚C Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% VDRM(max);30 60 70 - V/μs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 2.5 6.2 18 - A/ms
commutating current IT(RMS) = 16 A;
dVcom/dt = 10V/μs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 12 20 50 - A/ms
commutating current IT(RMS) = 16 A;
dVcom/dt = 0.1V/μs; gate
open circuit
Philips Semiconductors Product specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
Fig.6. Normalised gate trigger voltage 5 10 15 200
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
Number of cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Minimum, critical rate of change of
commutating current dIcom/dt versus junction
-50 0 50 100 150
Tj/°CIGT(25°C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C)
100 40 60 80 100 120 140
Tj/˚C
dIcom/dt (A/ms)
Philips Semiconductors Product specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Product specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS3 STATUS4
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design.

Partno	Mfg	Dc	Qty	Available	Descript
BTA216-600D \|BTA216600D	PHILIPS	N/a	1	avai	Three quadrant triacs guaranteed commutation