BTA216-600B Fast Delivery |IC PHOENIX CO.,LIMITED

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BTA216-600B
3Q Hi-Com Triac

�� Semiconductors� Product specification
Three quadrant triacs BTA216 series B
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsina plastic envelope intended
for use incircuitswherehigh static and BTA216- 500B 600B 800B
dynamic dV/dt and high dI/dt can VDRM Repetitive peak off-state 500 600 800 V
occur. These devices will commutate voltages
the full rated rms current at the I T(RMS) RMS on-state current 16 16 16 A
maximum rated junction temperature, ITSM Non-repetitive peak on-state 140 140 140 A
without the aidofa snubber. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 16 A
Tmb ≤ 99 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 140 A
t = 16.7 ms - 150 A2 tI2 t for fusing t = 10 ms - 98 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
�� Semiconductors Product specification
Three quadrant triacs BTA216 series B
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT th j-mb Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA
T2- G- - 30 60 mA Holding current VD = 12 V; IGT = 0.1 A - 31 60 mA On-state voltage IT = 20 A - 1.2 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 1000 4000 - V/μs
off-state voltage exponential waveform; gate open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; - 28 - A/ms
commutating current without snubber; gate open circuit
tgt Gate controlled turn-on ITM = 20 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs
2 Device does not trigger in the T2-, G+ quadrant.
�� Semiconductors �Product specification
Three quadrant triacs BTA216 series B
high commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C. 5 10 15 200
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
Number of cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
�� Semiconductors Product specification
Three quadrant triacs BTA216 series B
high commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH (25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of change of commutating
current dIcom/dt versus junction temperature.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 40 60 80 100 120 1401
Tj / C
dIcom/dt (A/ms)
�� Semiconductors Product specification
Three quadrant triacs BTA216 series B
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,03,0 max
not tinned
1,3
max
(2x) 3
2,4
0,6
4,5
max
5,9min
15,8max
1,3
2,54 2,54
0,9 max (3x)
13,5
min

Partno	Mfg	Dc	Qty	Available	Descript
BTA216-600B \|BTA216600B	NXP	N/a	350	avai	3Q Hi-Com Triac