BTA208X-600B ,Three quadrant triacs high commutationGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated high commutation SYMBOL PARAMETER MAX. MAX ..
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BZX84C10V ,Small Signal Zener Diodes Document Number 857632 Rev. 1.7, 14-Jul-05BZX84-V-SeriesVishay Semiconductors
BTA208X-600B
Three quadrant triacs high commutation
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series B
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated high commutation
SYMBOL PARAMETER MAX. MAX. MAX. UNITtriacsina full pack, plastic envelopeintended for usein motor control
BTA208X- 500B 600B 800Bcircuits where highstaticand dynamic VDRM Repetitive peak off-state 500 600 800 V
dV/dt and high dI/dt can occur. These voltagesdevices will commutate the full rated I T(RMS) RMS on-state current 8 8 8 A
rms currentat the maximum rated ITSM Non-repetitive peak 65 65 65 A
junction temperature, without the aid on-state currentofa snubber.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
case isolated
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -600 -800VDRM Repetitive peak off-state -
6001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 8 A
Ths ≤ 73 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A2 tI2 t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
case
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series B
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITVisol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.5 K/W
without heatsink compound - - 6.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITIGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA
T2- G- - 30 60 mA Holding current VD = 12 V; IGT = 0.1 A - 31 60 mA On-state voltage IT = 10 A - 1.3 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITdVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 1000 4000 - V/μs
off-state voltage exponential waveform; gate open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; - 14 - A/ms
commutating current without snubber; gate open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series B
high commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 73˚C.
Fig.6. Normalised gate trigger voltage 468 100
IT(RMS) / A
Ptot / W Ths(max) / C
-50 0 50 100 1500
Ths / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s 10 100 10000
Number of cycles at 50Hz
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series B
high commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.12. Typical, critical rate of change of commutating
current dIcom/dt versus junction temperature.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01
tp / s
Zth j-hs (K/W)
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 40 60 80 100 120 1401
Tj / C
dIcom/dt (A/ms)
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series B
high commutation
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
1.3
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series B
high commutation
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
